THN6701B Semiconductor SiGe NPN Transistor Unit in mm SOT-223 □ Applications 6.5 - VHF and UHF power amplifier 3.0 4 - High power gain 7.0 3.5 □ Features GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz 2 3 2.3 0.7 4.6 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Breakdown Voltage BVCBO 17 V Collector to Emitter Breakdown Voltage BVCEO 12 V Emitter to Base Breakdown Voltage BVEBO 1.5 V Collector Current IC 1 A Total Power Dissipation Ptot 3 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -65 ~ 150 ℃ Parameter 1 THN6701B □ Thermal Characteristics Symbol Parameter Rth j-a Thermal Resistance from Junction to Ambient Value Unit 40 K/W □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 15 V, IE = 0 mA - - 1.0 ㎂ ICEO VCE = 11 V, IB = 0 mA - - 5.0 ㎂ Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA - - 1.0 ㎂ DC Current Gain hFE VCE = 6 V, IC = 200 mA 20 - 200 Reverse Transfer Capacitance Cre VCB = 6 V, IE = 0 mA, f = 1 MHz - 4.5 - pF VCE = 6 V, ICQ = 50 mA, f = 465 MHz, PIN = 25 dBm - 35 - dBm - 10 - dB - 60 - % Collector Cut-off Current Output Power POUT Power Gain GP Power Added Efficiency PAE □ hFE Classification Marking R6701 R6701· hFE Value 20 - 100 80 - 200 2 THN6701B □ Typical Characteristics ( TA = 25℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Total Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 10 9 f = 1 MHz 8 7 6 5 4 3 2 1 0 0 o 2 4 10 Collector Current vs. Collector to Emitter Voltage DC Current Gain vs. Collector Current 0.5 100 VCE = 6 V 80 Collector Current, IC (A) DC Current Gain, hFE 8 Collector to Base Voltage, VCB (V) Ambient Temperature, TA ( C) 60 40 20 0 -2 10 6 IB = 10 mA 0.4 IB = 7.5 mA 0.3 IB = 5 mA 0.2 IB = 2.5 mA 0.1 -1 10 Collector Current, IC (A) 0 10 0.0 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) 3 THN6701B □ Application Information RF performance at TS ≤ 60 ℃ in common emitter configuration Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) PAE (%) CW, class-AB 465 6 35 ≥ 10 60 Collector Current or Power Added Efficiency vs. Input Power 1.6 20 45 f = 465 MHz, VCC = 6 V, ICQ = 50 mA GP 30 14 25 12 20 10 15 0 5 10 15 20 25 Input Power, PIN (dBm) Collector Current, IC (A) 16 35 Power Gain, GP (dB) Output Power, POUT (dBm) POUT 10 1.4 18 40 80 f = 465 MHz, VCC = 6 V, ICQ = 50 mA 1.2 70 60 PAE 1.0 50 0.8 40 IC 0.6 30 0.4 20 8 0.2 10 6 30 0.0 0 5 10 15 20 25 Power Added Efficiency, PAE (%) Output Power or Power Gain vs. Input Power 0 30 Input Power, PIN (dBm) 4 THN6701B □ Evaluation Board (for FRS at 465 MHz) C8 C5 C4 C7 L1 L2 C1 C2 C3 Part Value C1, C4 C7, C9 100 pF (1608, Murata) C2 10 pF (1608, Murata) C3 18 pF (1608, Murata) C5,C8 1 nF (1608, Murata) C6 15pF (1608, Murata) L1 100 nH (1608, Murata) L2 0.4 X 1.5 X 6T (Air Coil) C9 C6 FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm Evaluation board dimension = 119 ⅹ 50 mm2 Test condition: CW test, VCC = 6.0 V, ICQ = 50 mA, f = 465 MHz □ Test Circuit Schematic Diagram VBB VCC 1 nF 100 pF 100 nH 100 pF L2 0.5 X 1.5 X 6T W=1.3 mm L=10 mm INPUT 100 pF W=1.3 mm L=36 mm 10 pF W=1.3 mm L=5 mm 18 pF 1 nF W=1.3 mm 100 pF L=42 mm OUTPUT 15 pF W=1.3 mm L=2 mm 5 THN6701B □ Package Dimensions 0.95 0.85 Unit : mm S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 16° max 3.7 3.3 7.3 6.7 0.10 0.01 16° 10° max 1.8 max 1 2 3 0.8 0.6 2.3 4.6 6