AUK TBN6301U

TBN6301 Series
Semiconductor
Si NPN Transistor
Unit in mm
SOT-323
□ Applications
2.1±0.1
1.25±0.05
3
0.30±0.1
□ Features
1
1.30±0.1
2.0±0.2
- VHF and UHF wide band amplifier
2
- High gain bandwidth product
0.15±0.05
fT = 6 GHz at VCE = 3 V, IC = 10 mA
fT = 7.5 GHz at VCE = 5 V, IC = 20 mA
0.90±0.1
|S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz
0~0.1
- High power gain
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
□ Absolute Maximum Ratings (TA = 25 ℃)
Symbol
Ratings
Unit
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
8
V
Emitter to Base Voltage
BVEBO
3
V
Collector Current
IC
75
mA
Total Power Dissipation
Ptot
150
mW
Operating Junction Temperature
Tj
150
℃
Tstg
-65 ~ 150
℃
Parameter
Storage Temperature
Caution : Electro Static Discharge sensitive device
1
TBN6301 Series
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
VCB = 15 V, IE = 0 mA
0.5
㎂
ICEO
VCE = 8 V, IB = 0 mA
10
㎂
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
0.5
㎂
DC Current Gain
hFE
VCE = 3 V, IC = 10 mA
80
fT
VCE = 3 V, IC = 10 mA
5
6
GHz
VCE = 5 V, IC = 20 mA
6
7.5
GHz
VCE = 3 V, IC = 10 mA, f = 1 GHz
7
9
dB
VCE = 5 V, IC = 20 mA, f = 1 GHz
7
9.5
dB
Collector Cut-off Current
Gain Bandwidth Product
Insertion Power Gain
|S21|2
250
Noise Figure
NF
VCE = 3 V, IC = 10 mA, f = 1 GHz
1.4
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0 mA, f = 1 MHz
1.1
1.8
pF
□ hFE Classification
Marking
SB2
SB1
hFE Value
80 - 160
125 - 250
□ Available Package
Product
Package
Unit in mm
Dimension
TBN6301U
SOT-323
2.0 ⅹ 1.25, 1.0t
TBN6301E
SOT-523
1.6 ⅹ 0.8, 0.8t
2
TBN6301 Series
□ Typical Characteristics ( TA = 25 ℃, unless otherwise specified)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Reverse Transfer Capacitance, Cre (pF)
Power Dissipation
vs. Ambient Temperature
Collector Power Dissipation, PC (mW)
200
150
100
50
0
0
25
50
75
100
125
150
1.4
f = 1 MHz
1.2
1.0
0.8
0
1
2
3
4
5
6
7
o
Ambient Temperature, TA ( C)
Collector to Base Voltage, VCB (V)
DC Current Gain
vs. Collector Current
Collector Current
vs. Base to Emitter Voltage
30
400
VCE = 3 V
Collector Current, IC (mA)
350
DC Current Gain, hFE
300
250
200
150
100
25
VCE = 3 V
20
15
10
5
50
0
0.1
1
10
Collector Current, IC (mA)
100
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
3
TBN6301 Series
Collector Current
vs. Collector to Emitter Voltage
70
0
10
-1
10
VCE = 3 V
Collector Current, IC (mA)
Base Current, IB or Collector Current, IC (A)
Base Current, Collector Current
vs. Base to Emitter Voltage
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
IB Step = 50 µA
60
50
40
30
20
10
-8
10
0
-9
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.9
2
3
4
5
6
Collector to Emitter Voltage, VCE (V)
Base to Emitter Voltage, VBE (V)
Gain Bandwidth Product
vs. Collector Current
Insertion Power Gain
vs. Frequency
30
14
VCE = 3 V
VCE = 5 V
VCE = 7 V
10
8
6
4
2
0
1
VCE = 3 V
IC = 10 mA
25
2
12
Insertion Power Gain, |S21| (dB)
Gain Bandwidth Product, fT (GHz)
1
10
Collector Current, IC (mA)
100
20
15
10
5
0
0.1
1
Frequency (GHz)
4
TBN6301 Series
Maximum Available Gain
vs. Collector Current
Insertion Power Gain
vs. Collector Current
20
Maximum Available Gain, MAG (dB)
2
Insertion Power Gain, |S21| (dB)
16
VCE = 3 V
VCE = 5 V
VCE = 7 V
f = 1 GHz
14
12
10
8
6
4
2
0
VCE = 3 V
VCE = 5 V
VCE = 7 V
f = 1 GHz
15
10
5
0
1
10
Collector Current, IC (mA)
100
1
10
100
Collector Current, IC (mA)
5
TBN6301 Series
□ Dimensions of TBN6301E in mm
SOT-523
Pin Configuration
Pin No.
Symbol
Description
1
B
Base
2
E
Emitter
3
C
Collector
6