TBN6301 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - VHF and UHF wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz at VCE = 3 V, IC = 10 mA fT = 7.5 GHz at VCE = 5 V, IC = 20 mA 0.90±0.1 |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0~0.1 - High power gain 0.1 Min. Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 8 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 75 mA Total Power Dissipation Ptot 150 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 TBN6301 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 15 V, IE = 0 mA 0.5 ㎂ ICEO VCE = 8 V, IB = 0 mA 10 ㎂ Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 10 mA 80 fT VCE = 3 V, IC = 10 mA 5 6 GHz VCE = 5 V, IC = 20 mA 6 7.5 GHz VCE = 3 V, IC = 10 mA, f = 1 GHz 7 9 dB VCE = 5 V, IC = 20 mA, f = 1 GHz 7 9.5 dB Collector Cut-off Current Gain Bandwidth Product Insertion Power Gain |S21|2 250 Noise Figure NF VCE = 3 V, IC = 10 mA, f = 1 GHz 1.4 Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz 1.1 1.8 pF □ hFE Classification Marking SB2 SB1 hFE Value 80 - 160 125 - 250 □ Available Package Product Package Unit in mm Dimension TBN6301U SOT-323 2.0 ⅹ 1.25, 1.0t TBN6301E SOT-523 1.6 ⅹ 0.8, 0.8t 2 TBN6301 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) Power Dissipation vs. Ambient Temperature Collector Power Dissipation, PC (mW) 200 150 100 50 0 0 25 50 75 100 125 150 1.4 f = 1 MHz 1.2 1.0 0.8 0 1 2 3 4 5 6 7 o Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current Collector Current vs. Base to Emitter Voltage 30 400 VCE = 3 V Collector Current, IC (mA) 350 DC Current Gain, hFE 300 250 200 150 100 25 VCE = 3 V 20 15 10 5 50 0 0.1 1 10 Collector Current, IC (mA) 100 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) 3 TBN6301 Series Collector Current vs. Collector to Emitter Voltage 70 0 10 -1 10 VCE = 3 V Collector Current, IC (mA) Base Current, IB or Collector Current, IC (A) Base Current, Collector Current vs. Base to Emitter Voltage -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 IB Step = 50 µA 60 50 40 30 20 10 -8 10 0 -9 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 3 4 5 6 Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V) Gain Bandwidth Product vs. Collector Current Insertion Power Gain vs. Frequency 30 14 VCE = 3 V VCE = 5 V VCE = 7 V 10 8 6 4 2 0 1 VCE = 3 V IC = 10 mA 25 2 12 Insertion Power Gain, |S21| (dB) Gain Bandwidth Product, fT (GHz) 1 10 Collector Current, IC (mA) 100 20 15 10 5 0 0.1 1 Frequency (GHz) 4 TBN6301 Series Maximum Available Gain vs. Collector Current Insertion Power Gain vs. Collector Current 20 Maximum Available Gain, MAG (dB) 2 Insertion Power Gain, |S21| (dB) 16 VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz 14 12 10 8 6 4 2 0 VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz 15 10 5 0 1 10 Collector Current, IC (mA) 100 1 10 100 Collector Current, IC (mA) 5 TBN6301 Series □ Dimensions of TBN6301E in mm SOT-523 Pin Configuration Pin No. Symbol Description 1 B Base 2 E Emitter 3 C Collector 6