THN405Z Semiconductor SiGe NPN Transistor Unit in mm SOT-343 □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz 1 3 □ Features 2 - High gain bandwidth product 4 fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.8 GHz Pin Configuration 1. Base 2. Emitter 3. Emitter 4. Collector □ Absolute Maximum Ratings ( TA = 25 ℃ ) Symbol Ratings Unit Collector to Base Breakdown Voltage BVCBO 10 V Collector to Emitter Breakdown Voltage BVCEO 4.5 V Emitter to Base Breakdown Voltage BVEBO 1.5 V Collector Current IC 25 mA Total Power Dissipation Ptot 75 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 THN405Z □ Electrical Characteristics ( TA = 25 ℃ ) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 9 V, IE = 0 mA - - 1.0 ㎂ ICEO VCE = 3 V, IB = 0 mA - - 1.0 ㎂ Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 5 mA 50 - 260 fT VCE = 2 V, IC = 10 mA 15 17 - GHz VCE = 3 V, IC = 15 mA 16 19 - GHz VCE = 2 V, IC = 5 mA, f = 1.0 GHz 21 23 - dB VCE = 2 V, IC = 5 mA, f = 1.8 GHz 18 20 - dB VCE = 2 V, IC = 5 mA, f = 1.0 GHz 16 18 - dB VCE = 2 V, IC = 5 mA, f = 1.8 GHz 13 15 - dB Collector Cut-off Current Gain Bandwidth Product Maximum Available Gain Insertion Power Gain MAG |S21|2 Noise Figure NF VCE = 2 V, IC = 2 mA, f = 1.8 GHz - 1.4 2.0 dB Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz - 0.07 - pF □ hFE Classification Marking BF1 BF2 hFE Value 50 - 150 130 - 260 2 THN405Z □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified ) Collector to Base Capacitance vs. Collector to Base Voltage Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, PC (mW) 100 80 60 40 20 0 0 25 50 75 100 125 150 0.30 f = 1 MHz 0.25 0.20 0.15 0.10 0.05 0.00 0 o DC Current Gain vs. Collector Current 3 4 5 20 VCE = 3 V VCE = 3 V Collector Current, IC (mA) DC Current Gain, hFE 2 Collector Current vs. Base to Emitter Voltage 400 100 50 10 0.1 1 Collector to Base Voltage, VCB (V) Ambient Temperature, TA ( C) 1 10 Collector Current, IC (mA) 30 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) 3 THN405Z Collector Current vs. Collector to Emitter Voltage Gain Bandwidth Product vs. Collector Current 20 Gain Bandwidth Product, fT (GHz) 30 Collector Current, IC (mA) 18 16 14 IBI == 120 120 ㎂ uA B 12 IBB = 90 uA ㎂ 10 8 ㎂ 60 uA IIBB == 60 6 ㎂ IIBB = 30 uA 4 2 25 15 1 2 3 VCE = 2 V 10 0 0 VCE = 3 V 20 5 0 4 0 5 Collector to Emitter Voltage, VCE (V) 15 20 25 30 Collector Current, IC (mA) Maximum Available Gain vs. Collector Current Insertion Power Gain vs. Collector Current 35 30 30 25 f = 1 GHz 2 f = 1 GHz Insertion Power Gain, |S21| (dB) Maximum Available Gain, MAG (dB) 10 VCE = 3 V 25 VCE = 2 V 20 VCE = 3 V 15 f = 1.8 GHz VCE = 2 V 10 5 0 1 10 Collector Current, IC (mA) 100 20 VCE = 3 V VCE = 2 V VCE = 3 V 15 f = 1.8 GHz VCE = 2 V 10 5 0 1 10 100 Collector Current, IC (mA) 4 THN405Z Power Gain vs. Frequency 40 40 VCE = 2 V IC = 5 mA 35 35 30 30 MSG 25 Gain (dB) Gain (dB) VCE = 3 V IC = 5 mA 20 MAG 15 MSG 25 20 MAG 15 2 2 |S21| 10 |S21| 10 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Frequency (GHz) Noise Figure vs. Collector Current at VCE = 2 V, IC =parameters, ZS = ZSopt 4.0 Noise Figure, NF (dB) 3.5 3.0 2.5 f = 1.8 GHz 2.0 f = 0.9 GHz 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 Collector Current, IC (mA) 5