BILIN 2SC4180W

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4180W
FEATURES
z
Excellent hFE linearity.
z
High voltage and current.
z
Power dissipation PC=150mW.
z
Small package.
Pb
Lead-free
APPLICATIONS
z
SOT-323
Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
2SC4180W
Marking
Package Code
D15/D16/D17/D18
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
50
mA
PC
Collector Dissipation
150
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF040
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4180W
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown
voltage
V(BR)CBO
IC=100μA,IE=0
120
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=120V,IE=0
0.05
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.05
μA
DC current gain
hFE
VCE=6V,IC=1mA
135
VCE=6V,IC=1mA
100
Collector-emitter saturation
voltage
VCE(sat)
IC=10mA,IB=1mA
Transition frequency
fT
VCE=6V, IE=1mA
Collector output capacitance
Cob
VCB=30V,IE=0,f=1MHz
CLASSIFICATION
Range
OF
MAX UNIT
900
0.3
250
MHz
2.5
hFE
135-270
200-400
300-600
450-900
D15
D16
D17
D18
Marking
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
Min
Max
A
1.8
2.2
B
1.15
1.35
C
1.0Typical
D
0.15
0.35
E
0.25
0.40
G
1.2
1.4
H
0.02
0.1
J
K
0.1Typical
2.1
2.3
All Dimensions in mm
Document number: BL/SSSTF040
Rev.A
V
www.galaxycn.com
2
pF
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
PACKAGE
2SC4180W
INFORMATION
Device
Package
Shipping
2SC4180W
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF040
Rev.A
www.galaxycn.com
3