BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4180W FEATURES z Excellent hFE linearity. z High voltage and current. z Power dissipation PC=150mW. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. 2SC4180W Marking Package Code D15/D16/D17/D18 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF040 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4180W Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA DC current gain hFE VCE=6V,IC=1mA 135 VCE=6V,IC=1mA 100 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA Transition frequency fT VCE=6V, IE=1mA Collector output capacitance Cob VCB=30V,IE=0,f=1MHz CLASSIFICATION Range OF MAX UNIT 900 0.3 250 MHz 2.5 hFE 135-270 200-400 300-600 450-900 D15 D16 D17 D18 Marking PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm Document number: BL/SSSTF040 Rev.A V www.galaxycn.com 2 pF BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor PACKAGE 2SC4180W INFORMATION Device Package Shipping 2SC4180W SOT-323 3000/Tape&Reel Document number: BL/SSSTF040 Rev.A www.galaxycn.com 3