BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4102W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2SC4102W CP/CQ/CR SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF037 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4102W Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=2mA Collector-emitter saturation voltage VCE(sat) ICE=10mA,IB=1mA Transition frequency fT VCE=12V, IC= 2mA,f=100MHz 140 MHz Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 2.5 pF CLASSIFICATION OF Rank Range Marking Document number: BL/SSSTF037 Rev.A 180 560 0.5 V hFE R S 180-390 270-560 TR TS www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4102W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping 2SC4102W SOT-323 3000/Tape&Reel Document number: BL/SSSTF037 Rev.A www.galaxycn.com 3