BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation.(PC=100mW) APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2SC4215W QR/QO/QY SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF041 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2SC4215W Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=4V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA Collector-base time constant CC.rbb’ VCE=6V,IC=1mA Transition frequency fT VCE=6V, IE= 1mA 40 MAX UNIT 200 25 260 550 ps MHz CLASSIFICANTION OF hFE Marking QR QO QY hFE 90-180 135-270 200-400 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF041 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2SC4215W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping 2SC4215W SOT-323 3000/Tape&Reel Document number: BL/SSSTF041 Rev.A www.galaxycn.com 3