APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR MOSFET T-MaxTM TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). D • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation G S All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APL502B2_L (G) UNIT 500 Volts Drain-Source Voltage 58 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 730 Watts Linear Derating Factor 5.84 W/°C VGSM PD TJ,TSTG 232 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 58 (Repetitive and Non-Repetitive) EAR Volts Amps 50 1 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 Volts ID(ON) On State Drain Current 58 Amps IDSS IGSS VGS(TH) (VDS > I D(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 0.09 (VGS = 12V, 29A) 25 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) MAX Ohms μA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 2-2010 RDS(ON) 2 TYP 050-5896 Rev E Symbol APL502B2_L(G) DYNAMIC CHARACTERISTICS Symbol Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) tr td(off) tf TYP MAX 7485 9000 VDS = 25V f = 1 MHz 1290 1810 617 930 VGS = 15V 13 26 VDD = 250V 27 54 ID = 29A @ 25°C 56 84 RG = 0.6W 16 20 TYP MAX Test Conditions Characteristic MIN VGS = 0V Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case WT Package Weight MIN .17 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% 3 4 oz 5.9 g See MIL-STD-750 Method 3471 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A 0.18 ZθJC, THERMAL IMPEDANCE (°C/W) D = 0.9 0.14 0.7 0.12 0.10 0.5 0.08 0.06 0.3 0.04 0.1 0.02 0 2-2010 10 050-5896 Rev E SINGLE PULSE 0.05 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION -4 °C/W 0.22 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT Typical Performance Curves VGS=10V, 15 V 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 60 40 TJ = +125°C TJ = +25°C 0 TJ = -55°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 8V 80 7.5 V 60 40 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS 1.30 NORMALIZED TO V GS 1.20 = 10V @ 29A VGS=10V 1.10 1.00 0.90 0.80 0.70 VGS=20V 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 50 40 30 20 10 25 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I = 29A V GS = 12V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) D 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 2-2010 ID, DRAIN CURRENT (AMPERES) 6V 5.5 V 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 6.5 V 20 60 0 7V 050-5896 Rev E ID, DRAIN CURRENT (AMPERES) (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 VGS=10, 15V 0 0 20 APL502B2_L(G) 120 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 120 IDM 100 10 IDM 100 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) APL502B2_L(G) 400 400 13mS Rds(on) 100mS 1mS 10mS 1 10 13mS Rds(on) 1mS T = 150°C 1 T = 125 C J C 100mS C Scaling for Different Case & Junction Temperatures: DC line ° T = 75 C 0.1 10mS J T = 25°C 100mS ° 100mS I =I 0.1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, FORWARD SAFE OPERATING AREA D D (TC = 25°C) DC line *(T - T )/125 C J 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA 30,000 C, CAPACITANCE (pF) 10,000 Ciss 5,000 Coss 1,000 Crss 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE T-MAXTM (B2) Package Outline TO-264 (L) Package Outline e1 SAC 96.5% Sn, 3.0% Ag, 0.5% Cu Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2-2010 050-5896 Rev E 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 25.48 (1.003) 26.49 (1.043) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.