CEL GET

1,
Introduction
In the fields of comm unication systems and consumer electronics
(e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners),
analog and degital ICs from UHF to microwave frequency range are widely
used. These analog and degital ICs are required for compactness, economy
and high reliability.
To respond to above described requirment, NEC has developed many
Kinds of Si-monolithic microwave ICs.
In this report, the device structure and the results of the reliability
qualification tests on Si MMICs are described.
Qualification tests have been performed for the MMIC and the MMIC
elements such as transistor, resistor and capacitor.
2.
Device structure
Fig.l
Fig.3 show the cross sectional view transistor cell, capacitor
and resistor. The MNS(Metal Nitride ~miconductor) sturcture is adoped
in capacitors.
The resistors are formed by polysilicon.
The features of transistor cell are described below:
(1) An optimal epitaxial layer grown by VPE(Vapour Phased Epitaxy).
(2) Oxide isolation to reduce parasitic capacitance.
(3) A shallow and higher impurity doped base by ion implantation.
A shallow emitter by diffusion from As-doped polysilicon.
(4) An emitter of 0.5 .u m width processed by photo lithograph.
(5) A nitride passivation film.
(6) A Ti-Pt-Au electrode structure.
3..Qualification
(1)
Tests
Qualification
Tests on Basic Element.
Design rules for ICs are qualified
by performing
test on each basic elements consisting
ofIC
qualification
such as transistor,
capacitor and resistor .
A series of qualification
following items:
(a) High temperature
on transistor
(b)
(2)
storage tests at Ta=259°C,295
and 337°C
and resistor .
High temperature
Qualification
tests on basic elements consist of
DC bias test at Tj=200°C
on capacitor.
Tests on IC
Qualification
tests of ICs are performed
family classified by integration
on typical types of each
level, function,
structure
.production technique applied.
A series of qualification tests on IC consist of following
(a)
Environmental
(b)
Radiation
(c)
(d)
Solderability strength.
High temperature storage tests at Ta=200°C.
(e)
High temperature
Test conditions
tests (Thermal
and
items:
and Mechanical).
hardness.
DC bias tests at Tj=200°C.
and sample size of the qualification
tests are
shown Table 1.
The delta parameters
Table 2-2.
and criteria
are shown in Table 2-1 and
4. Test results and Discussions
I
Basic
element
I
(1) Transistor
The summary of qualification test results are presented at
Table 3.
High temperature storage test
High temperature storage test at Ta=259°C,295°C and 337°C
were performed using 10 samples. The test results are shown
Table 4.
At the high temperature stress level(Ta=337°C), the samples
have started to fail from 100 hours. The failure mode is hFE
degradation.
This is caused by diffusion of Au into Si due to degradation of Pt
as barrier .
The Arrhenius plots on the tests are shown in Fig. 4, using
f::::.Ea=1.8e
V that has been confirmed at Au electrode microwave
Si transistor .
From this plot, the estimated MTF for transistor at Tj=100°C
is 3.0 x 1011 hours.
(2)
Resistor Element
Poly silicon Resistor
High temperature storage tests at Ta=259°C, 295°C and 337°C
were performed using 10 samples for 3000 hours.
The test results are shown Table 5. The Arrhenius
test are shown in Fig. 4.
This Arrhenius
plot gives the activation
energy of 1.8eV. From this plot, the estimated
Resistor at Ta=100°C is 3.0 x 1011 hours.
(3)
plots on the
MTF for polysilcon
Capacitor
Biased test on 10 MNS capacitors has been performed
condition of 6V at Ta=200°C
with
for 5000 hours.
The test results are shown at Table 6.
No failure was observed.
Consequently,
each basic element is considered to be sufficiently
reliable for constructing
MMI Cs.
~~
Qualification
test have performed
for prescaler IC
.uPB1509B as the typical of the family which are classified by process
and structure
CD
of wafer fabrication.
High Temperature
High temperature
storage test
storage test at Ta=200°C
was performed
for
.£1PB1509B using 20 samples.
This test was performed
for 5000 hours. The test results are
shown Table 7. No failure has been observed for 5000 hours.
(?) High Temperature DC bias test
High temperature DC bias test at Tj=200°C
was performed
for
.£1PB1509B using 100 samples.
This test was performed
for 5000 hours. The test results are
shown Table 8. No failure has been observed for 5000 hours.
6Icc and 6Pout
Any significant
changes are shown in Fig. 5.
variation
of the two parameters
has not been
observed during 5000 hours at Tj=200°C.
If one device was failed at the test period of 5000 hours at
Tj=200°C, the MTF of 6Icc or 6Pout
Fig. 6, using 6Ea=1.8eV,
Au electrode microwave
line were drawn in
which is confirmed
Si transistor.
by the results of
MTF at Tj=100°C
is
estimated to be over 1 x 109 hours.
@
Thermal and Mechanical Environmental Test and Solderability
Strength.
As shown Table 3, no failure was obserbed with respect to
thermal envionmental test, mechanical environmental test and
solderability strength.
@
Radiation
Hardness
Gamma-ray
irradiation
test was carried out for prescaler IC
.u PB1509B.
Dose rate is 1 x 105 and
1 x 106 rad/hour.
The test results are shown Table 3. No failure was observed
with respect to this test. Consequently,
the Si MMICs
radiation
5.
are sufficiently
it was confirmed that
tough from the view point of
hardness.
Conclusion
Accelerated
life test have been performed
Tr, resistor and capacitor.
on prescaler, their
MTF at Tj=100°C
is estimated
to be over
1 x 109 hours.
Radiation
Hardness tests have been carried out on prescaler .
No degradation
was observed up to 1 x 106 rad gamma ray irradiation.
It has confirmed that the Si MMICs
applications.
are sufficiently
reliable for practical
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Delta Parameters and Criteria of Basic Elements
Table 2-2
Delta Parameters
and Criteria
of Si MMIC
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Table
Test
High Temperature
4
Storage Test of Transistor
Number
Quantity
Condition
10
Ta=259t
Element
Failures
of
0
72
144
240
400
650
1000
2000
0
0
0
0
0
0
0
0
*
*
10
Ta=295°C
10
Ta=337°C
*hFE
3
0
*
10
9
9
7
8
3
degradation
Table
High Temperature
5
Resistor
Number
Quantity
Condition
Storage Test of Resistor Element
Silicon
Poly
Test
*
*
*
0
0
0
0
0
0
Hours
Failures
of
Q-
50
100
300
500
1000
1500
2000
2500
3000
Ta=259°C
10
0
0
0
0
0
0
0
0
0
0
Ta=295°C
10
0
0
0
0
0
1
3
5
5
7
Ta=337°C
10
0
0
2
5
7
10
Hours
Table 6
High Temperature
Quantity
Test
Condition
10
Tj=200°C
Table
Test
20
Test
Table 8
Test
200
0
0
100
Test
5001
0
168
0
0
Condition
0
0
5000
~
0
Hours
t)
Storage Test of Si MMIC
of
Failures
1000 ri""5OO
~
0
0
0
3000
Hours
0
Ta=200°C
High Temperature
DC Bias Test of Si MMIC
Number
0
168
500
0
0
0
Condition
Failures
of
1000
Number
Quantity
Condition
.uPB1509B
0
Quantity
Condition
.uPB1509B
Number
High Temperature
7
DC Bia.s Test of Capacitor
Tj=200°C
of
Failures
1000 ri""5OOl
0
0
5000
0
Hours
f.ICC(%)
10.00%
8.00%
6.00%
4.00%
2.00%
~---AVE
MAX
0.00%
-+-NIN
-2.00%
-4.00%
-6.00%
-8.00%
-10.00%
6.po(dB)
2
5
1
0.5
0
-0.5
-1.5
-2
Fig.5
~PB15O9B
DC BIAS
PARAMETER
TEST
CHANGES
ON HIGH
TEMPERATURE
Fig.6
ARRHNIUS
PLOT
TEMPERATURE
OF PRESCALER ON
DC BIAS TEST
HIGH