1, Introduction In the fields of comm unication systems and consumer electronics (e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners), analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy and high reliability. To respond to above described requirment, NEC has developed many Kinds of Si-monolithic microwave ICs. In this report, the device structure and the results of the reliability qualification tests on Si MMICs are described. Qualification tests have been performed for the MMIC and the MMIC elements such as transistor, resistor and capacitor. 2. Device structure Fig.l Fig.3 show the cross sectional view transistor cell, capacitor and resistor. The MNS(Metal Nitride ~miconductor) sturcture is adoped in capacitors. The resistors are formed by polysilicon. The features of transistor cell are described below: (1) An optimal epitaxial layer grown by VPE(Vapour Phased Epitaxy). (2) Oxide isolation to reduce parasitic capacitance. (3) A shallow and higher impurity doped base by ion implantation. A shallow emitter by diffusion from As-doped polysilicon. (4) An emitter of 0.5 .u m width processed by photo lithograph. (5) A nitride passivation film. (6) A Ti-Pt-Au electrode structure. 3..Qualification (1) Tests Qualification Tests on Basic Element. Design rules for ICs are qualified by performing test on each basic elements consisting ofIC qualification such as transistor, capacitor and resistor . A series of qualification following items: (a) High temperature on transistor (b) (2) storage tests at Ta=259°C,295 and 337°C and resistor . High temperature Qualification tests on basic elements consist of DC bias test at Tj=200°C on capacitor. Tests on IC Qualification tests of ICs are performed family classified by integration on typical types of each level, function, structure .production technique applied. A series of qualification tests on IC consist of following (a) Environmental (b) Radiation (c) (d) Solderability strength. High temperature storage tests at Ta=200°C. (e) High temperature Test conditions tests (Thermal and items: and Mechanical). hardness. DC bias tests at Tj=200°C. and sample size of the qualification tests are shown Table 1. The delta parameters Table 2-2. and criteria are shown in Table 2-1 and 4. Test results and Discussions I Basic element I (1) Transistor The summary of qualification test results are presented at Table 3. High temperature storage test High temperature storage test at Ta=259°C,295°C and 337°C were performed using 10 samples. The test results are shown Table 4. At the high temperature stress level(Ta=337°C), the samples have started to fail from 100 hours. The failure mode is hFE degradation. This is caused by diffusion of Au into Si due to degradation of Pt as barrier . The Arrhenius plots on the tests are shown in Fig. 4, using f::::.Ea=1.8e V that has been confirmed at Au electrode microwave Si transistor . From this plot, the estimated MTF for transistor at Tj=100°C is 3.0 x 1011 hours. (2) Resistor Element Poly silicon Resistor High temperature storage tests at Ta=259°C, 295°C and 337°C were performed using 10 samples for 3000 hours. The test results are shown Table 5. The Arrhenius test are shown in Fig. 4. This Arrhenius plot gives the activation energy of 1.8eV. From this plot, the estimated Resistor at Ta=100°C is 3.0 x 1011 hours. (3) plots on the MTF for polysilcon Capacitor Biased test on 10 MNS capacitors has been performed condition of 6V at Ta=200°C with for 5000 hours. The test results are shown at Table 6. No failure was observed. Consequently, each basic element is considered to be sufficiently reliable for constructing MMI Cs. ~~ Qualification test have performed for prescaler IC .uPB1509B as the typical of the family which are classified by process and structure CD of wafer fabrication. High Temperature High temperature storage test storage test at Ta=200°C was performed for .£1PB1509B using 20 samples. This test was performed for 5000 hours. The test results are shown Table 7. No failure has been observed for 5000 hours. (?) High Temperature DC bias test High temperature DC bias test at Tj=200°C was performed for .£1PB1509B using 100 samples. This test was performed for 5000 hours. The test results are shown Table 8. No failure has been observed for 5000 hours. 6Icc and 6Pout Any significant changes are shown in Fig. 5. variation of the two parameters has not been observed during 5000 hours at Tj=200°C. If one device was failed at the test period of 5000 hours at Tj=200°C, the MTF of 6Icc or 6Pout Fig. 6, using 6Ea=1.8eV, Au electrode microwave line were drawn in which is confirmed Si transistor. by the results of MTF at Tj=100°C is estimated to be over 1 x 109 hours. @ Thermal and Mechanical Environmental Test and Solderability Strength. As shown Table 3, no failure was obserbed with respect to thermal envionmental test, mechanical environmental test and solderability strength. @ Radiation Hardness Gamma-ray irradiation test was carried out for prescaler IC .u PB1509B. Dose rate is 1 x 105 and 1 x 106 rad/hour. The test results are shown Table 3. No failure was observed with respect to this test. Consequently, the Si MMICs radiation 5. are sufficiently it was confirmed that tough from the view point of hardness. Conclusion Accelerated life test have been performed Tr, resistor and capacitor. on prescaler, their MTF at Tj=100°C is estimated to be over 1 x 109 hours. 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