CEL GET

This
report
--1.Test
presents
the
qual
ification
test
results-on-NE272
series.
Device
NE272
AI
GaAs
/In
GaAs
2.Qualification
A
hetero-junction
FEr
tests
serres
of
Qual
ification
tests
consists
l)High
temperature
DC Bias
Test
2)High
temperature
Reverse
Bias
The
test
conditions
and
The
test
parameters
were
bk~t
Resu
The
sample
of
qual
l)High
Temperature
The
followingfcondition
VDs=2V
ification
Test
size
( H T R B T )
are
test
DC Bias
shown
before
and
result
is
in
Table
after
1.
the
tests.
ID=10mA
has
test
results
are
shown
elapsed
for
5000
The
changes
all
temperature
condition
'4V
been
Table
3-1,3-2.
adopted:
in
Table
hours
parameters
DC Bias
following
in
T ch= 175°C
test
of
presented
Test
The
VGDS=.
rierns
( H T p T )
measured
The
The
following
lli
summary
2)High
of
3-1
under
are
and
the
Fig.1
(1)-Fig.1(8)
above
withjn
the
condition.
delta
crilteria.
Test
has
been
adopted:
T ch= 150°C
The
test
results
are
shown
The
test
elapsed
for
5000
The
changes
of
all
in
Table
hours
parameters
3-2
under
are
and
the
within
Fig.2(1)-F:jg.2(8).
above
the
condition.
delta
criteria.
4.Conclusion
From
the
t
concluded
is
l)There
series
qual
2) There
test
results
described
above
UP to 5000 hours at Tch=l75°C
in High temperature
UP to 5000 hours at Tch=lSO°C
in High temperature
test.
is no degradation
Reverse bias
is
ification
that:
is no degradation
DC bias
NE272
of
qua
test.
fied
for
high
rei
iabi
ity
appl
ications.
2/8
3/g
.,
Test Item and Test concLi1i.Q11
Table 1
Table
Parameter
loss
gm
VGS(off)
IGSO
BVGDO
VGF
2
Delta
Parameters
Test condition
Delta Criteria
+20%
20%
10=10mA
+20%
20%
10=100 11 A
+20%
Vos=2V,
VGS=-
IGo=-10
Cri~
VGS=OV
VDs=2V,
Vos=2V,
and
-+-500nA
~~hichever
3V
11
A
IG F=1 11 A
+20%
+20%
-t. O.2dB
NF
Vos=2V,
---20%
or
100%
is greater
20%
--20%
O.2dB
10=10mA
f=12GHZ
Ga
+. O.5dB ---O.5dB