This report --1.Test presents the qual ification test results-on-NE272 series. Device NE272 AI GaAs /In GaAs 2.Qualification A hetero-junction FEr tests serres of Qual ification tests consists l)High temperature DC Bias Test 2)High temperature Reverse Bias The test conditions and The test parameters were bk~t Resu The sample of qual l)High Temperature The followingfcondition VDs=2V ification Test size ( H T R B T ) are test DC Bias shown before and result is in Table after 1. the tests. ID=10mA has test results are shown elapsed for 5000 The changes all temperature condition '4V been Table 3-1,3-2. adopted: in Table hours parameters DC Bias following in T ch= 175°C test of presented Test The VGDS=. rierns ( H T p T ) measured The The following lli summary 2)High of 3-1 under are and the Fig.1 (1)-Fig.1(8) above withjn the condition. delta crilteria. Test has been adopted: T ch= 150°C The test results are shown The test elapsed for 5000 The changes of all in Table hours parameters 3-2 under are and the within Fig.2(1)-F:jg.2(8). above the condition. delta criteria. 4.Conclusion From the t concluded is l)There series qual 2) There test results described above UP to 5000 hours at Tch=l75°C in High temperature UP to 5000 hours at Tch=lSO°C in High temperature test. is no degradation Reverse bias is ification that: is no degradation DC bias NE272 of qua test. fied for high rei iabi ity appl ications. 2/8 3/g ., Test Item and Test concLi1i.Q11 Table 1 Table Parameter loss gm VGS(off) IGSO BVGDO VGF 2 Delta Parameters Test condition Delta Criteria +20% 20% 10=10mA +20% 20% 10=100 11 A +20% Vos=2V, VGS=- IGo=-10 Cri~ VGS=OV VDs=2V, Vos=2V, and -+-500nA ~~hichever 3V 11 A IG F=1 11 A +20% +20% -t. O.2dB NF Vos=2V, ---20% or 100% is greater 20% --20% O.2dB 10=10mA f=12GHZ Ga +. O.5dB ---O.5dB