.' .. . . , , I GET-BE-OOO61/4 "'-.I . Qualification Test Report Si MMIC (useon UHSO Process) Prepared on :June26,2003 i£.( fJi$; by: YASUSHISATOH Assistant Manager Approved by : J. f~~.().Io-'J"~TOSHIAKI YOKOKA W A Manager Reliability and QC Department NEC CompoundSemiconductor Devices,LTD. , I.' , GET-BE-0006 2/4 1. Introduction This report presents UHSO (fT =25GHz) Process Qualification Test result. The Process Qualification Test was performed by UPC8182B(B). 2. Qualification Test items and failure criteria 2. 1 Thermal Environmental Test (Table. 1.2) 2.2 Mechanical Environmental Test (Table. 1.2) 2. 3 High Temperature DC Bias Test (Table. 1.2) 3. Result 3.1 Thermal and Mechanical Environmental Test As shown Table 3.no failure was observed with respect to thermal environmental test and mechanical environmental test. 3.2 High Temperature DC Bias Test High temperature DC bias test at Ta=200t was performed for UPC8182B(B) using 100 samples. The test was performed for 3000 hours. The test results are shown Table 3.No failure has been observed for 3000 hours. LlIcc change is shown in Fig.1. GET-BE-0006 3/4 Table I Test Item and Test Condition Test Items Test Condition Sample MIL-STD 883 Method Size Thermal Environmental Test , a)Solderability 2003 b)Temperature Cycling c)Thermal Shock 1010:Cond.D -65'C 1011:Cond.A O'C d)Moisture Resistance 1004:0mit initial conditioning e)Hermetic Seal 1071 +200'C.IOOcycles +100'C.15cycles 8 Fine Leak (Cond.Al) 1 X 10-9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble Mechanical Environmental Test a)Mechanical Shock 2002: 1.47 x 104rn/s2(1500G).0.5ms.3axis.5times b)Vibration. Variable 2007:100 2000Hz. 196rn/S2(20G).3axis. Frequency c)Constant Acceleration 4min.4times 2001: 1.96 x 105rn/s2(20000G).3axis.1min..1time d)Hermetic Seal 1071 8 Fine Leak (Cond.A1) 1 X 10- 9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble Hi erature DC Bias Test 1005:Ta=200'C.Vcc=3V.t=3000Hrs 100 Table 2 Parameters and Criteria Limits Parameters Symbols Circuit Current Power Gain Output Power Test Condition Delta Criteria Vcc=3V Min - Max 38mA G 1 Vcc=3V.f=0.9GHz 19dB 25dB - G 2 Vcc=3V,f=1.9GHz 18dB 24dB - G 3 Vcc=3V,f=2.4GHz 18dB 24dB - Pout Vcc=3V,f=2.4GHz 7 dBm - - - 6.5dB - Icc :t 15% Pin=-5dBm Noise Fi ure ~~_._"_. NF Vcc=3V.f=2.4GHZ -~.~ ,..:_~~ ~,~-" ~ . ---~. GET-BE-OOO6 4/4 Table 3 Qualification Test Results Results Test Items " lfailure/sample! \ Reference Thermal Environmental Test 0/8 - Mechanical Environmental Test 0/8 - High Temp. DC Bias Test 0/100 - (at 3000Hrs) 1 * g ; ~ ~ LlIcc 15.00% 10.00% 5.00% ~MAX -e:- AVE 0.00% -.- MIN -5.00% -10.00% -15.00% 0 168 336 1000 hours 2000 3000 Fig.1 Icc changeson high temperature DC Bias Test.