ETC SRF

Reliability Qualification Report
STQ-2016Z - Matte Sn, RoHS compliant
Products Qualified by Similarity
STQ-1016Z SRF-1016Z SRQ-2116Z
STQ-3016Z SRF-2016Z
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
be entirely at the user’s own risk. Data subject to change.
303 S. Technology Ct, Broomfield CO, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
Document RQR-104756 Rev. B
STQ-2016Z Reliability Qualification Report
I. Qualification Overview
The STQ-2016Z family of products has demonstrated reliable operation by passing all
qualification testing in Sirenza Microdevices' product qualification test plan. The
STQ-2016Z has been subject to stresses such as humidity (autoclave), extreme hot and
cold environments (temperature cycling), moisture sensitivity (MSL-1 and solder reflow
testing), and several others as part of the qualification process.
II. Introduction
The Sirenza Microdevices’ STQ-2016Z is a direct quadrature modulator targeted for use
in a wide range of communications systems, including cellular/PCS, CDMA2000, UMTS,
and ISM data com. This device features a wide 700-2500 MHz operating frequency
band, excellent carrier and sideband suppression, and a low broadband noise floor.
III. Fabrication Technology
These amplifiers are manufactured using a Silicon Germanium Heterojunction Bipolar
Transistor (HBT) technology. This patented self-aligned emitter, double poly HBT
process has been in production by our foundry since 1998. The process has been
successfully used for a wide range of RFIC products including GSM PAs, DECT front
end transceivers, LNAs & VCOs. This process offers comparable performance to GaAs
HBTs with the added advantages of mature and highly reproducible Silicon wafer
processing.
IV. Package Type
The STQ-2016Z is packaged in a plastic encapsulated TSSOP-16 package that is
assembled using a highly reproducible automated assembly process. The die is mounted
using an industry standard thermally and electrically conductive silver epoxy. The die is
mounted directly to the exposed paddle to provide a low thermal resistance path for heat
conduction out of the package.
Figure 1 : Image of TSSOP -16 Exposed Paddle Plastic Package
STQ-2016Z Reliability Qualification Report
V. Qualification Methodology
The Sirenza Microdevices qualification process consists of a series of tests designed to
stress various potential failure mechanisms. This testing is performed to ensure that
Sirenza Microdevices products are robust against potential failure modes that could arise
from the various die and package failure mechanisms stressed. The qualification testing
is based on JESD test methods common to the semiconductor industry. The
manufacturing test specifications are used as the PASS/FAIL criteria for initial and final
DC/RF tests.
VI. Qualification By Similarity
A device can be qualified by similarity to previously qualified products provided that no
new potential failure modes/mechanisms are possible in the new design. The following
products have been qualified by similarity to STQ-2016Z:
STQ-1016Z STQ-3016Z SRF-1016Z SRF-2016Z SRQ-2116Z
VII. Operational Life Testing
Sirenza Microdevices defines operational life testing as a DC biased elevated
temperature test performed at the maximum operational junction temperature limit. For
the STQ-2016Z the maximum operational temperature limit is 150oC. The purpose of the
operational life test is to statistically show that the product operated at its maximum
operational ratings will be reliable by operating several hundred devices for a total time of
1000 hours. The results for this test are expressed in device hours that are calculated by
multiplying the total number of devices passing the test by the number of hours tested.
STQ-2016Z Reliability Qualification Report
VIII. Moisture Sensitivity Level - MSL Level 1 Device
STQ-2016Z has successfully completed 168 hours of moisture soak (85oC/85%RH)
followed by three convection reflow cycles with a peak temperature of 270oC. The
successful completion of this test classifies the part as JESD22-A113B Moisture
Sensitivity Level 1 (MSL-1). MSL-1 indicates that no special dry pack requirements or
time limits from opening of static bag to reflow exist for the STQ-2016Z. MSL-1 is highest
level of moisture resistance that a device can be classified according to the above
mentioned standard.
IX. Electrostatic Discharge Classification
Sirenza Microdevices classifies Human Body Model (HBM) electrostatic discharge (ESD)
according to the JESD22-A114 convention. All pin pair combinations were tested. Each
pin pair is stressed at one static voltage level using 1 positive and 1 negative pulse
polarity to determine the weakest pin pair combination. The weakest pin pair is tested
with 3 devices below and above the failure voltage to classify the part. The Pass/Fail
status of a part is determined by the manufacturing test specification. The ESD class
quoted indicates that the device passed exposure to a certain voltage, but does not pass
the next higher level. The following table indicates the JESD ESD sensitivity
classification levels.
Class
Passes
Fails
0
1A
1B
1C
2
0V
250 V
500 V
1000 V
2000 V
<250 V
500 V
1000 V
2000 V
4000 V
Part Number
STQ-2016Z
SRQ-2116Z
HBM ESD Rating
Class 1A
Class 1A
X. Operational Life Test Results
HTOL Completion
Date
Test Duration
Junction
Temperature
Quantity
DeviceHours
July 2005
Dec 2005
1000 hours
1000 hours
150°C
150°C
39
40
39,000
40,000
STQ-2016Z Reliability Qualification Report
XI. Qualification Test Results
Group
Test Name
Test Condition/
Standard
Sample Size
Results
359
Pass
Preconditioning
MSL1
Reflow @ 270oC Peak
JESD22-A113C
6
Pass
B1a
Temperature Cycling
Air to Air, Soldered on PCB
-65oC to 150oC
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
Tj = 150°C
1000 hours
JESD22-A108B
79
Pass
B1b
High Temperature
Operating Life
15
Pass
HAST
Tamb=110°C, 85%RH
Biased, 264 hours
JESD22-A110B
10
Pass
B1d
Power Temperature
Cycle
-40°C to +85°C
Cycled bias (5’ on/5’off)
1000 cycles
JESD22-A109A
Pass
Autoclave
Tamb=121°C, 100%RH
Un-Biased, 96 hours
JESD22-A102C
30
B2
60
Pass
Temperature Cycle
-65°C to +150°C
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
B
B1c
B3
STQ-2016Z Reliability Qualification Report
XI. Qualification Test Results
Group
C
D
Test Name
Low Temperature
Storage
High Temperature
Storage
Test Condition/
Standard
Sample Size
Results
Tamb=-40°C
1000 hours
27
Pass
Tamb=-65°C
1000 hours
20
Pass
Tamb=150°C
1000 hours
JESD22-A103B
27
Pass
30
Pass
Dip & Look
Steam Age Condition C
Dip Condition A, 215°C
JESD22-B102C
G
Solderability
Dip & Look
Steam Age Condition C
Dip Condition B, 245°C
JESD22-B102C
F
Tin Whisker
Tamb=60°C, 90%RH
1800 hours
NEMI
15
10
Pass
STQ-2016Z Reliability Qualification Report
XII. Junction Temperature Determination
One key issue in performing qualification testing is to accurately determine the junction
temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity
corrected infrared camera measurement to resolve the surface temperature of the device
at the maximum operational power dissipation. The results are displayed below for the
STQ-2016Z device running at operational current of Id= 80mA, a device voltage of 5V,
and lead temperature of 85°C.
Figure 2: Infrared Thermal Image of STQ-2016Z, Vd = 5.0V, Id =80mA, Tj = 98°C
Figure 3: Infrared Thermal Image of SRQ-2116Z, Vd = 5.0V, Id =157mA, Tj = 103.8°C
STQ-2016Z Reliability Qualification Report
XIII. FIT Calculation from Accelerated Life Test Data
The following data demonstrates the results from accelerated life tests performed on the
Sirenza 4A SiGe HBT Process. The test was performed on 791 units running at a peak
junction temperature up to 195oC. The FIT rate calculation can be found below. The FIT
rates were generated assuming 1 failure. In reality, there were no failures, making this a
very conservative calculation.
Activation Energy (eV)
0.7
FIT (per 109 dev-hours)
@ Tj=55oC, 60% CL
0.73
Table 3: Activation Energy and calculated FIT for STQ-2016Z.