4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS (Units in mm) • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX PACKAGE OUTLINE 79A 1.5 ± 0.2 4.2 Max Source Source Drain Drain 1.0 Max 1.2 Max Gate 4.4 Max 5.7 Max 0.6 ± 0.15 0.8 ± 0.15 Gate 0.4 ± 0.15 • SINGLE SUPPLY: 3.0 to 6.0 V 0.8 Max 3.6 ± 0.2 0.9 ± 0.2 0.2 ± 0.1 5.7 Max Bottom View DESCRIPTION The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function. ELECTRICAL CHARACTERISTICS (TA APPLICATIONS • DIGITAL CELLULAR PHONES • DIGITAL CORDLESS PHONES • OTHERS = 25°C) PART NUMBER NE5500179A PACKAGE OUTLINE SYMBOLS CHARACTERISTICS 79A UNITS MIN TYP MAX TEST CONDITIONS IGSS Gate to Source Leakage Current nA - - 100 VGSS = 6.0 V IDSS Drain to Source Leakage Current nA - - 100 VDSS = 8.5 V VTH Gate Threshold Voltage V 1.0 1.35 2.0 VDS = 4.8 V, IDS = 1 mA gm Transconductance S - 0.41 - VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA RDS(ON) Drain to Source On Resistance - - 1.00 - VGS = 6.0 V, VDS = 0.5 V BVDSS Drain to Source Breakdown Voltage V 20 24 - IDSS = 10 A California Eastern Laboratories NE5500179A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C) SYMBOLS GL CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS dB — 13.0 — f = 1.9 GHz, PIN = 0 dBm, Linear Gain VDS = 3.0 V, IDQ = 100 mA POUT IOP ηADD GL Output Power dBm — 24.5 — f = 1.9 GHz, PIN = 15 dBm, Operating Current mA — 170 — VDS = 3.0 V, IDQ = 100 mA Power Added Efficiency % — 50 Linear Gain dB — 13.5 — f = 1.9 GHz, PIN = 0 dBm, VDS = 3.5 V, IDQ = 100 mA POUT(1) Output Power dBm — 26.5 — f = 1.9 GHz, PIN = 18 dBm, IOP(1) Operating Current mA — 210 — VDS = 3.5 V, IDQ = 100 mA ηADD Power Added Efficiency % — 52 POUT(2) Maximum Output Power dBm — 27.0 — f = 1.9 GHz, PIN = 18 dBm Operating Current mA — 260 — VDS = 3.5 V, VGS = 2.5 V Linear Gain dB — 14.0 — f = 1.9 GHz, PIN = 0 dBm, Output Power dBm 28.5 29.5 — f = 1.9 GHz, PIN = 20 dBm, IOP(1) Operating Current mA — 300 — VDS = 4.8 V, IDQ = 100 mA ηADD Power Added Efficiency % 47 55 — POUT(2) Maximum Output Power dBm — 30.0 — Operating Current mA — 350 — VDS = 4.8 V, VGS = 2.5 V Linear Gain dB — 14.5 — f = 1.9 GHz, PIN = 0 dBm, IOP(2) GL VDS = 4.8 V, IDQ = 100 mA POUT(1) IOP(2) GL f = 1.9 GHz, PIN = 20 dBm VDS =6.0 V, IDQ = 100 mA POUT IOP ηADD Output Power dBm — 31.5 — f = 1.9 GHz, PIN = 22 dBm, Operating Current mA — 380 — VDS =6.0 V, IDQ = 100 mA % — 55 — Power Added Efficiency ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain Supply Voltage V 8.5 VGS Gate Supply Voltage V 6 ID Drain Current A 0.25 ID Drain Current (Pulse Test)2 A 0.5 dBm 25 PIN Input Power3 ORDERING INFORMATION1 PART NUMBER QTY NE5500179A-T1 1 Kpcs/Reel Note: 1. Embossed tape 12 mm wide. Gate pin faces perforation side of the tape. PT Total Power Dissipation W 1.6 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, TON = LMS. 3. Frequency = 1.9 GHz, VDS = 4.8 V. RECOMMENDED OPERATING CONDITIONS SYMBOLS UNITS MIN TYP MAX VDS Drain Supply Voltage V 3.0 3.5 6.0 VGS Gate Supply Voltage V 0 2.0 2.5 Duty Cycle 50%, Ton1ms A — — 0.5 Frequency = 1.9 GHz, VDS = 4.8 V dBm 21 22 23 GHz 1.6 — 2.5 ˚C -30 25 85 ID PIN f TOP PARAMETERS Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature TEST CONDITIONS NE5500179A TYPICAL PERFORMANCE CURVES (TA = 25°C) QUIESCENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 VGS MAX = 10 V Step = 1.0 V VDS = 4.8 V Quiescent Drain Current, IDQ (mA) 2.0 1.5 1.0 0.5 100 10 1 0.1 0.0 4 6 8 10 12 14 16 1.5 1.0 Gate to Source Voltage, VGS (V) 500 PO = 29.8 dBm 400 30 POUT 25 300 ID 20 200 100 η 15 100 ηADD 0 10 0 5 10 15 0 25 20 50 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 31 Output Power, POUT (dBm) Output Power, POUT (dBm) VDS = 4.8 V IDQ = 100 mA f = 1.9 GHz Drain Current, IDS (mA) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER Efficiency/Power Added Efficiency, η, ηADD (%) Drain to Source Voltage, VDS (V) 35 400 30 POUT IDS 300 29 28 20 300 ID 200 15 100 η 10 100 50 0 0 ηADD 5 5 10 15 Input Power, PIN (dBm) 200 100 100 50 0 0 η 27 ηADD APC 26 0.0 2.0 1.0 3.0 4.0 20 25 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 28 Output Power, POUT (dBm) POUT Efficiency/Power Added Efficiency, η, ηADD (%) 400 Drain Current, IDS (mA) Output Power, POUT (dBm) 500 PO = 26.8 dBm 25 0 PMAX = 30.1 dBm Gate to Source Voltage, VGS (V) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER VDS = 3.5 V IDQ = 100 mA f = 1.9 GHz 500 VDS = 4.8 V f = 1.9 GHz PIN = 20 dBm Input Power, PIN (dBm) 30 3.0 2.5 2.0 Efficiency/Power Added Efficiency, η, ηADD (%) 2 500 VDS = 3.5 V f = 1.9 GHz PIN = 18 dBm PMAX = 27.2 dBm 400 27 POUT 26 300 IDS 25 200 100 100 50 0 0 η 24 ηADD APC 23 0.0 1.0 2.0 3.0 Gate to Source Voltage, VGS (V) 4.0 Efficiency/Power Added Efficiency, η, ηADD (%) 0 Drain Current, IDS (mA) Drain Current, IDS (A) 2.5 Drain Current, IDS (mA) 3.0 NE5500179A TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE5500179A VDS = 4.8 V, IDS = 100 mA FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 S11 MAG 0.884 0.792 0.757 0.747 0.746 0.751 0.756 0.772 0.777 0.785 0.796 0.804 0.814 0.820 0.827 0.832 0.833 0.846 0.843 0.850 0.851 0.854 0.861 0.857 0.870 0.870 0.867 0.870 0.873 0.882 S21 ANG -69.6 -107.8 -127.4 -138.7 -146.2 -151.8 -155.6 -159.5 -162.3 -165.0 -167.7 -169.9 -172.4 -174.6 -176.8 -179.6 177.9 175.6 172.9 170.3 167.1 165.1 162.3 159.5 156.6 153.9 151.6 148.9 146.5 143.9 MAG 18.11 12.12 8.58 6.58 5.28 4.32 3.68 3.12 2.75 2.40 2.17 1.91 1.74 1.58 1.45 1.33 1.19 1.13 1.02 0.99 0.89 0.83 0.75 0.76 0.67 0.65 0.56 0.57 0.52 0.51 S12 ANG 135.5 112.3 98.8 89.4 82.1 76.2 70.9 65.9 61.3 58.2 53.7 51.4 46.4 44.3 39.7 38.4 34.6 31.6 28.3 27.1 23.3 21.4 16.9 15.5 13.8 12.0 9.0 3.9 4.7 2.7 MAG 0.037 0.049 0.052 0.052 0.052 0.050 0.048 0.048 0.045 0.043 0.040 0.038 0.036 0.035 0.035 0.031 0.030 0.028 0.025 0.024 0.021 0.019 0.017 0.017 0.015 0.016 0.010 0.010 0.007 0.008 S22 ANG 48.2 23.2 10.8 3.3 -4.1 -8.9 -12.6 -17.0 -22.1 -21.9 -26.9 -29.2 -30.5 -31.4 -36.6 -38.5 -38.3 -38.7 -38.1 -40.9 -42.9 -48.0 -43.6 -40.8 -49.0 -36.8 -33.0 -43.4 -18.3 -15.0 MAG 0.517 0.569 0.598 0.618 0.641 0.660 0.681 0.696 0.715 0.732 0.749 0.763 0.776 0.789 0.803 0.808 0.814 0.829 0.834 0.840 0.842 0.847 0.856 0.866 0.862 0.865 0.866 0.879 0.879 0.885 ANG -85.0 -120.7 -136.5 -144.8 -149.8 -153.4 -156.2 -158.9 -161.0 -162.9 -164.9 -166.9 -169.1 -171.0 -172.7 -175.0 -176.7 -179.2 178.7 176.5 174.4 172.1 169.1 167.0 164.7 162.0 159.1 156.7 154.5 152.0 K MAG1 0.00 0.06 0.08 0.11 0.13 0.18 0.22 0.23 0.28 0.33 0.35 0.42 0.45 0.48 0.44 0.62 0.78 0.70 0.98 0.97 1.42 1.62 1.88 1.68 2.20 2.13 4.44 3.96 6.01 4.60 (dB) 26.8 23.9 22.1 21.0 20.1 19.3 18.8 18.1 17.9 17.4 17.2 17.0 16.8 16.5 16.1 16.3 16.0 16.1 16.0 16.1 12.4 11.7 10.9 11.5 10.2 10.1 7.8 8.6 7.6 8.2 Note: 1. Gain Calculation: MAG = |S21| |S12| (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE5500179A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 1.7 0.5 1.0 Gate 1.2 5.9 Drain Source Through hole φ 0.2 × 33 0.5 0.5 6.1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE