0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS (Units in mm) • HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 30% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8 • HIGH RELIABILITY GATE 0.5 ± 0.1 SOURCE • CLASS A OPERATION 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 DESCRIPTION 9.8 MAX 2.3 1.13 The NE950R575 Power GaAs FET covers the 4 GHz to 18 GHz frequency range for commercial amplifiers and oscillator applications. 0.9 MAX The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE950R575 Electrical Characteristics Functional Characteristics PACKAGE OUTLINE SYMBOLS GL CHARACTERISTICS Linear Gain 75 UNITS MIN TYP dB 8.0 9.0 25.5 26.5 PIN = 19 dBm1 30 POUT = P1dB1 P1dB Output Power (1 dB) dBm POUT Power Out at Fixed Input Power dBm ηADD Power Added Efficiency MAX 27.5 % °C/W TEST CONDITIONS VDS = 9 V IDS = 180 mA set f = 14.5 GHz, Rg = 1KΩ RTH Thermal Resistance 30 Channel-to-Case IDSS Saturated Drain Current A 0.18 0.4 0.7 VDS = 1.5 V, VGS = 0 V Vp Pinch-off Voltage V -2.5 -1.8 -0.5 VDS = 2.5 V, IDS = 2 mA Gate to Drain Break Down Voltage V 15 BVGD IGD = 2 mA Note: 1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz. California Eastern Laboratories NE950R575 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS UNITS RATINGS SYMBOLS VDS Drain to Source Voltage PARAMETERS V 15 VDS Drain to Source Voltage VGS Gate to Source Voltage V -7 TCH Channel Temperature Pt Total Power Dissipation W 3.0 GCOMP ID Drain Current mA 600 IGF Gate Current (forward) mA 5.0 -5.0 IGR Gate Current (reverse) mA TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 PARAMETERS Input Power UNITS MIN TYP V MAX 9 9 °C 130 dBcomp 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 25 45 20 30 15 15 10 10 15 20 25 Input Power, PIN (dBm) 1.5 Gate Current, IG (mA) f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 KΩ 1.0 0.5 0.0 5 10 15 20 Input Power, PIN (dBm) 12 250 10 200 8 150 6 0 100 5 10 15 20 Input Power, PIN (dBm) GATE CURRENT vs. INPUT POWER -0.5 300 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 KΩ f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 KΩ 5 Drain Current, ID (mA) 60 Efficiency, ηADD (%) Output Power, POUT (dBm) 30 25 25 4 Linear Gain, GL (dB) DRAIN CURRENT AND LINEAR GAIN vs. INPUT POWER OUTPUT POWER AND EFFICIENCY vs. INPUT POWER NE960R575 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE960R575 VDS = 9 V, IDSQ = 180 mA FREQUENCY S11 GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 MAG 0.87 0.84 0.84 0.82 0.81 0.79 0.73 0.69 0.62 0.63 0.76 0.79 0.87 0.87 0.83 S21 ANG -140 -154 -160 -163 -167 -175 171 147 109 47 0 -21 -45 -53 -60 MAG 4.36 2.98 2.36 2.08 1.99 1.96 2.02 2.20 2.30 2.22 1.62 1.30 0.90 0.60 0.43 S12 ANG 85 68 54 42 33 18 1 -20 -51 -88 -124 -144 -172 166 150 MAG 0.042 0.040 0.040 0.043 0.047 0.055 0.066 0.076 0.083 0.063 0.032 0.017 0.022 0.034 0.037 S22 ANG 23 19 22 32 34 35 30 18 -4 -41 -82 -141 128 101 82 MAG 0.23 0.25 0.30 0.32 0.34 0.36 0.36 0.37 0.38 0.45 0.57 0.61 0.66 0.73 0.75 ANG -131 -143 -149 -154 -160 -168 178 159 136 95 65 49 27 11 -2 Caution S-Parameters include bond wires. START 2 GHz, STOP 16 GHz, STEP 1 GHz S11 S12 1.0 +90° 2.0 0.5 +135° +45° 16 GHz 0.5 0 0.5 0.5 ∞ 2 GHz +180° 0° 2 GHz 16 GHz -0.5 -135° -2.0 -45° -1.0 -90° Rmax = 1 Rmax = 0.1 S22 S21 1.0 +90° +45° 16 GHz +180° 2.0 0.5 2 GHz +135° 0° 0 0.5 1.0 2.0 16 GHz ∞ 2 GHz -135° -45° -0.5 -2.0 -1.0 -90° Rmax = 1 Rmax = 5 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/18/2001