NEC NE960R575

0.5W X, Ku-BAND POWER GaAs FET
FEATURES
NE960R575
OUTLINE DIMENSIONS (Units in mm)
• HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB
PACKAGE OUTLINE 75
• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz
• HIGH EFFICIENCY: 30% TYP @ 14.5 GHz
+0.15
-0.05
2 PLACES
φ 1.8
• HIGH RELIABILITY
GATE
0.5 ± 0.1
SOURCE
• CLASS A OPERATION
2.7
2.3
3.0 MIN BOTH
LEADS
DRAIN
2.7 TYP
7.0
+0.06
0.1 -0.02
DESCRIPTION
9.8 MAX
2.3
1.13
The NE950R575 Power GaAs FET covers the 4 GHz to 18
GHz frequency range for commercial amplifiers and oscillator
applications.
0.9 MAX
The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance
and test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA
= 25°C)
PART NUMBER
NE950R575
Electrical
Characteristics
Functional
Characteristics
PACKAGE OUTLINE
SYMBOLS
GL
CHARACTERISTICS
Linear Gain
75
UNITS
MIN
TYP
dB
8.0
9.0
25.5
26.5
PIN = 19 dBm1
30
POUT = P1dB1
P1dB
Output Power (1 dB)
dBm
POUT
Power Out at Fixed Input Power
dBm
ηADD
Power Added Efficiency
MAX
27.5
%
°C/W
TEST CONDITIONS
VDS = 9 V
IDS = 180 mA set
f = 14.5 GHz, Rg = 1KΩ
RTH
Thermal Resistance
30
Channel-to-Case
IDSS
Saturated Drain Current
A
0.18
0.4
0.7
VDS = 1.5 V, VGS = 0 V
Vp
Pinch-off Voltage
V
-2.5
-1.8
-0.5
VDS = 2.5 V, IDS = 2 mA
Gate to Drain Break Down Voltage
V
15
BVGD
IGD = 2 mA
Note:
1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz.
California Eastern Laboratories
NE950R575
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
UNITS
RATINGS
SYMBOLS
VDS
Drain to Source Voltage
PARAMETERS
V
15
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
V
-7
TCH
Channel Temperature
Pt
Total Power Dissipation
W
3.0
GCOMP
ID
Drain Current
mA
600
IGF
Gate Current (forward)
mA
5.0
-5.0
IGR
Gate Current (reverse)
mA
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
PARAMETERS
Input Power
UNITS MIN TYP
V
MAX
9
9
°C
130
dBcomp
3
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
25
45
20
30
15
15
10
10
15
20
25
Input Power, PIN (dBm)
1.5
Gate Current, IG (mA)
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 180 mA
RG = 1 KΩ
1.0
0.5
0.0
5
10
15
20
Input Power, PIN (dBm)
12
250
10
200
8
150
6
0
100
5
10
15
20
Input Power, PIN (dBm)
GATE CURRENT vs. INPUT POWER
-0.5
300
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 180 mA
RG = 1 KΩ
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 180 mA
RG = 1 KΩ
5
Drain Current, ID (mA)
60
Efficiency, ηADD (%)
Output Power, POUT (dBm)
30
25
25
4
Linear Gain, GL (dB)
DRAIN CURRENT AND LINEAR GAIN
vs. INPUT POWER
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
NE960R575
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE960R575
VDS = 9 V, IDSQ = 180 mA
FREQUENCY
S11
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
MAG
0.87
0.84
0.84
0.82
0.81
0.79
0.73
0.69
0.62
0.63
0.76
0.79
0.87
0.87
0.83
S21
ANG
-140
-154
-160
-163
-167
-175
171
147
109
47
0
-21
-45
-53
-60
MAG
4.36
2.98
2.36
2.08
1.99
1.96
2.02
2.20
2.30
2.22
1.62
1.30
0.90
0.60
0.43
S12
ANG
85
68
54
42
33
18
1
-20
-51
-88
-124
-144
-172
166
150
MAG
0.042
0.040
0.040
0.043
0.047
0.055
0.066
0.076
0.083
0.063
0.032
0.017
0.022
0.034
0.037
S22
ANG
23
19
22
32
34
35
30
18
-4
-41
-82
-141
128
101
82
MAG
0.23
0.25
0.30
0.32
0.34
0.36
0.36
0.37
0.38
0.45
0.57
0.61
0.66
0.73
0.75
ANG
-131
-143
-149
-154
-160
-168
178
159
136
95
65
49
27
11
-2
Caution S-Parameters include bond wires.
START 2 GHz, STOP 16 GHz, STEP 1 GHz
S11
S12
1.0
+90°
2.0
0.5
+135°
+45°
16 GHz
0.5
0
0.5
0.5
∞
2 GHz
+180°
0°
2 GHz
16 GHz
-0.5
-135°
-2.0
-45°
-1.0
-90°
Rmax = 1
Rmax = 0.1
S22
S21
1.0
+90°
+45°
16 GHz
+180°
2.0
0.5
2 GHz
+135°
0°
0
0.5
1.0
2.0
16 GHz
∞
2 GHz
-135°
-45°
-0.5
-2.0
-1.0
-90°
Rmax = 1
Rmax = 5
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/18/2001