0.2W X, Ku-BAND POWER GaAs MESFET FEATURES NE960R275 OUTLINE DIMENSIONS (Units in mm) • HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 35% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8 • HIGH RELIABILITY GATE 0.5 ± 0.1 SOURCE • CLASS A OPERATION 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 DESCRIPTION 9.8 MAX 2.3 1.13 The NE960R275 is a Power GaAs MESFET covering the 4 GHz to 18 GHz range and is designed for X and Ku Band amplifiers and oscillator applications. 0.9 MAX The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE960R275 Electrical Characteristics Functional Characteristics PACKAGE OUTLINE SYMBOLS GL CHARACTERISTICS Linear Gain 75 UNITS MIN TYP dB 8.0 10.0 22.0 24.0 P1dB Output Power (1 dB) dBm POUT Power Out at Fixed Input Power dBm ηADD Power Added Efficiency RTH Thermal Resistance IDSS Saturated Drain Current Vp BVGD MAX 25.0 % POUT = P1dB1 35 °C/W TEST CONDITIONS VDS = 9 V IDSQ = 90 mA f = 14.5 GHz, Rg = 1KΩ PIN = 15 dBm1 60 Channel to Case A 0.09 0.2 0.35 VDS = 1.5 V, VGS = 0 V Pinch-off Voltage V -2.5 -1.8 -0.5 VDS = 2.5 V, IDS = 1 mA Gate to Drain Break Down Voltage V 15 IGD = 1 mA Note: 1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz. California Eastern Laboratories NE960R275 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS UNITS RATINGS SYMBOLS PARAMETERS VDS Drain to Source Voltage PARAMETERS V 15 VDS Drain to Source Voltage VGS Gate to Source Voltage V -7 TCH Channel Temperature Pt Total Power Dissipation W 2.5 GCOMP ID Drain Current mA 350 IGF Gate Current (forward) mA 2.5 -2.5 IGR Gate Current (reverse) mA TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 UNITS Gain Compression MIN TYP MAX V 9 9 °C 130 dBcomp 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 25 45 20 30 15 15 Drain Current, ID (mA) 60 Efficiency, ηADD (%) Output Power, POUT (dBm) 30 200 14 150 12 100 10 50 8 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 KΩ f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 KΩ 10 5 10 15 20 25 Input Power, PIN (dBm) GATE CURRENT vs. INPUT POWER Gate Current, IG (mA) f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 KΩ 1.0 0.5 0.0 5 10 15 20 Input Power, PIN (dBm) 0 5 10 15 20 Input Power, PIN (dBm) 1.5 -0.5 0 25 25 6 Linear Gain, GL (dB) DRAIN CURRENT AND LINEAR GAIN vs. INPUT POWER OUTPUT POWER AND EFFICIENCY vs. INPUT POWER NE960R275 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE960R275 VDS = 9.0 V, IDSQ = 90 mA FREQUENCY S11 GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S21 MAG 0.89 0.86 0.85 0.84 0.81 0.83 0.81 0.75 0.71 0.62 0.48 0.54 0.69 0.80 0.81 ANG -113 -129 -138 -140 -144 -152 -163 -176 166 140 86 20 -20 -45 -66 MAG 3.99 2.88 2.29 1.99 1.78 1.77 1.82 1.89 2.12 2.42 2.50 2.32 1.77 1.30 1.03 S12 ANG 98 80 65 51 39 27 15 0 -19 -44 -78 -113 -144 -166 167 MAG 0.057 0.058 0.057 0.057 0.059 0.060 0.062 0.062 0.064 0.072 0.074 0.065 0.049 0.040 0.039 S22 ANG 34 15 10 7 5 3 3 1 0 -17 -46 -88 -132 -176 149 MAG 0.42 0.46 0.43 0.41 0.44 0.49 0.53 0.52 0.47 0.45 0.50 0.56 0.57 0.61 0.67 ANG -79 -85 -94 -110 -125 -135 -141 -150 -167 164 129 94 68 44 27 START 2 GHz, STOP 16 GHz, STEP 1 GHz +90° 1.0 S11 0.5 S12 +135° 2.0 +45° 2 GHz 16 GHz 0.5 0 1.0 2.0 ∞ ±180° 16 GHz 2 GHz -135° -2.0 -0.5 -1.0 0° -45° Rmax = 1 1.0 +90° S21 +135° 2 GHz Rmax = 0.1 -90° S22 +45° 0.5 2.0 16 GHz 16 GHz ±180° 0° 0 0.5 1.0 2.0 ∞ 2 GHz -135° -45° -90° Rmax = 5 EXCLUSIVE NORTH AMERICAN AGENT FOR -2.0 -0.5 -1.0 Rmax = 1 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/18/2001