NEC NE960R275

0.2W X, Ku-BAND POWER GaAs MESFET
FEATURES
NE960R275
OUTLINE DIMENSIONS (Units in mm)
• HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB
PACKAGE OUTLINE 75
• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz
• HIGH EFFICIENCY: 35% TYP @ 14.5 GHz
+0.15
-0.05
2 PLACES
φ 1.8
• HIGH RELIABILITY
GATE
0.5 ± 0.1
SOURCE
• CLASS A OPERATION
2.7
2.3
3.0 MIN BOTH
LEADS
DRAIN
2.7 TYP
7.0
+0.06
0.1 -0.02
DESCRIPTION
9.8 MAX
2.3
1.13
The NE960R275 is a Power GaAs MESFET covering the 4
GHz to 18 GHz range and is designed for X and Ku Band
amplifiers and oscillator applications.
0.9 MAX
The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance and
test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA
= 25°C)
PART NUMBER
NE960R275
Electrical
Characteristics
Functional
Characteristics
PACKAGE OUTLINE
SYMBOLS
GL
CHARACTERISTICS
Linear Gain
75
UNITS
MIN
TYP
dB
8.0
10.0
22.0
24.0
P1dB
Output Power (1 dB)
dBm
POUT
Power Out at Fixed Input Power
dBm
ηADD
Power Added Efficiency
RTH
Thermal Resistance
IDSS
Saturated Drain Current
Vp
BVGD
MAX
25.0
%
POUT = P1dB1
35
°C/W
TEST CONDITIONS
VDS = 9 V
IDSQ = 90 mA
f = 14.5 GHz, Rg = 1KΩ
PIN = 15 dBm1
60
Channel to Case
A
0.09
0.2
0.35
VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
V
-2.5
-1.8
-0.5
VDS = 2.5 V, IDS = 1 mA
Gate to Drain Break Down Voltage
V
15
IGD = 1 mA
Note:
1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz.
California Eastern Laboratories
NE960R275
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
UNITS
RATINGS
SYMBOLS
PARAMETERS
VDS
Drain to Source Voltage
PARAMETERS
V
15
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
V
-7
TCH
Channel Temperature
Pt
Total Power Dissipation
W
2.5
GCOMP
ID
Drain Current
mA
350
IGF
Gate Current (forward)
mA
2.5
-2.5
IGR
Gate Current (reverse)
mA
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
UNITS
Gain Compression
MIN TYP MAX
V
9
9
°C
130
dBcomp
3
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
25
45
20
30
15
15
Drain Current, ID (mA)
60
Efficiency, ηADD (%)
Output Power, POUT (dBm)
30
200
14
150
12
100
10
50
8
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 90 mA
RG = 1 KΩ
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 90 mA
RG = 1 KΩ
10
5
10
15
20
25
Input Power, PIN (dBm)
GATE CURRENT vs. INPUT POWER
Gate Current, IG (mA)
f = 14.5 GHz (1 tone)
VDS = 9 V, IDSQ = 90 mA
RG = 1 KΩ
1.0
0.5
0.0
5
10
15
20
Input Power, PIN (dBm)
0
5
10
15
20
Input Power, PIN (dBm)
1.5
-0.5
0
25
25
6
Linear Gain, GL (dB)
DRAIN CURRENT AND LINEAR GAIN
vs. INPUT POWER
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
NE960R275
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE960R275
VDS = 9.0 V, IDSQ = 90 mA
FREQUENCY
S11
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S21
MAG
0.89
0.86
0.85
0.84
0.81
0.83
0.81
0.75
0.71
0.62
0.48
0.54
0.69
0.80
0.81
ANG
-113
-129
-138
-140
-144
-152
-163
-176
166
140
86
20
-20
-45
-66
MAG
3.99
2.88
2.29
1.99
1.78
1.77
1.82
1.89
2.12
2.42
2.50
2.32
1.77
1.30
1.03
S12
ANG
98
80
65
51
39
27
15
0
-19
-44
-78
-113
-144
-166
167
MAG
0.057
0.058
0.057
0.057
0.059
0.060
0.062
0.062
0.064
0.072
0.074
0.065
0.049
0.040
0.039
S22
ANG
34
15
10
7
5
3
3
1
0
-17
-46
-88
-132
-176
149
MAG
0.42
0.46
0.43
0.41
0.44
0.49
0.53
0.52
0.47
0.45
0.50
0.56
0.57
0.61
0.67
ANG
-79
-85
-94
-110
-125
-135
-141
-150
-167
164
129
94
68
44
27
START 2 GHz, STOP 16 GHz, STEP 1 GHz
+90°
1.0
S11
0.5
S12 +135°
2.0
+45°
2 GHz
16 GHz
0.5
0
1.0
2.0
∞
±180°
16 GHz
2 GHz
-135°
-2.0
-0.5
-1.0
0°
-45°
Rmax = 1
1.0
+90°
S21 +135°
2 GHz
Rmax = 0.1
-90°
S22
+45°
0.5
2.0
16 GHz
16 GHz
±180°
0°
0
0.5
1.0
2.0
∞
2 GHz
-135°
-45°
-90°
Rmax = 5
EXCLUSIVE NORTH AMERICAN AGENT FOR
-2.0
-0.5
-1.0
Rmax = 1
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/18/2001