3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS (Units in mm) • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX PACKAGE OUTLINE 79A 1.5 ± 0.2 4.2 Max Source Source Drain Drain 1.0 Max 1.2 Max Gate 4.4 Max 0.8 ± 0.15 5.7 Max 0.6 ± 0.15 Gate 0.4 ± 0.15 • SINGLE SUPPLY: 2.8 to 6.0 V 0.8 Max 3.6 ± 0.2 0.9 ± 0.2 0.2 ± 0.1 5.7 Max Bottom View DESCRIPTION The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function. ELECTRICAL CHARACTERISTICS (TA APPLICATIONS • DIGITAL CELLULAR PHONES • OTHERS = 25°C) PART NUMBER NE5510279A PACKAGE OUTLINE SYMBOLS CHARACTERISTICS 79A UNITS MIN TYP MAX TEST CONDITIONS IGSS Gate to Source Leakage Current nA - - 100 VGSS = 6.0 V IDSS Drain to Source Leakage Current nA - - 100 VDSS = 8.5 V VTH Gate Threshold Voltage V 1.0 1.35 2.0 VDS = 4.8 V, IDS = 1 mA gm Transconductance S - 1.50 - VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA RDS(ON) Drain to Source On Resistance - - 0.27 - VGS = 6.0 V, VDS = 0.5 V BVDSS Drain to Source Breakdown Voltage V 20 24 - IDSS = 10 A California Eastern Laboratories NE5510279A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C) SYMBOLS GL CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm, Linear Gain VDS = 3.5 V,IDQ = 400 mA POUT(1) IOP(1) Output Power dBm 31.0 32.0 — f = 1.8 GHz, PIN = 25 dBm, Operating Current mA — 810 — VDS = 3.5 V,IDQ = 400 mA 45 f = 1.8 GHz, PIN = 25 dBm ηADD(1) Power Added Efficiency % 37 POUT(2) Maximum Output Power dBm — 32.6 — Operating Current mA — 1,000 — VDS = 3.5 V,VGS = 2.5 V Output Power at Lower Voltage dBm — 31.1 — f = 1.8 GHz, PIN = 25 dBm Operating Current mA — 880 — VDS = 2.8 V,VGS = 2.5 V Linear Gain dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm, Output Power dBm — 35.0 — f = 1.8 GHz, PIN = 28 dBm, Operating Current mA — 1,120 — VDS = 4.8 V,IDQ = 400 mA IOP(2) POUT(3) IOP(3) GL VDS = 4.8 V,IDQ = 400 mA POUT IOP ηADD GL Power Added Efficiency % — 48 — Linear Gain dB 35.0 35.0 35.0 f = 1.8 GHz, PIN = 10 dBm, VDS =6.0 V,IDQ = 400 mA POUT IOP ηADD Output Power dBm 37.0 f = 1.8 GHz, PIN = 30 dBm, Operating Current mA 1,400 VDS =6.0 V,IDQ = 400 mA % 49 Power Added Efficiency ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain Supply Voltage V 8.5 VGS Gate Supply Voltage V 6 ID Drain Current A 1.0 ID Drain Current (Pulse Test)2 A 2.0 Power3 ORDERING INFORMATION PART NUMBER QTY NE5510279A-T1 1 Kpcs/Reel Note: Embossed tape 12 mm wide. Gate pin faces perforation side of the tape. PIN Input dBm 30 PT Total Power Dissipation W 2.4 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, ton = 1 ms. 3. Frequency = 1.8 GHz, VDS = 3.5 V. RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS TEST CONDITIONS UNITS MIN TYP MAX 6.0 VDS Drain Supply Voltage V 2.8 3.5 VGS Gate Supply Voltage V 0 2.0 2.5 Duty Cycle 50%, Ton1ms A — — 1.5 Frequency = 1.8 GHz, VDS = 3.5 V dBm 24 25 26 GHz 1.6 — 2.0 ˚C -30 25 85 ID PIN f TOP Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature NE5510279A TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12.0 10000 VGS MAX = 10 V Step = 1.0 V VDS = 3.5 V Drain Current, IDQ (mA) Drain Current, IDS (A) 10.0 8.0 6.0 4.0 1000 100 10 2.0 0.0 1 8 10 12 14 16 1.0 Output Power, POUT (dBm) 2000 POUT 25 1500 20 ID 1000 100 500 50 0 0 η 15 ηADD 10 5 10 15 20 30 25 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 33 Output Power, POUT (dBm) 2500 PO = 32.0 dBm Efficiency/Power Added Efficiency, η, ηADD (%) 35 Drain Current, IDS (mA) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER VDS = 3.5 V IDQ = 400 mA f = 1.8 GHz VDS = 3.5 V f = 1.8 GHz PIN = 25 dBm 32 1500 31 IDS 30 POUT 25 1500 20 1000 100 500 50 ID η 15 ηADD 10 0 15 20 Input Power, PIN (dBm) 1000 100 500 50 0 0 η 29 ηADD APC 28 0.0 2.0 1.0 3.0 4.0 25 30 0 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 2500 32 PO = 31.1 dBm Output Power, POUT (dBm) 2000 30 Efficiency/Power Added Efficiency, η, ηADD (%) Output Power, POUT (dBm) PMAX = 30.6 dBm Drain Current, IDS (mA) 2500 35 10 2000 POUT Gate to Source Voltage, VGS (V) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER 5 2500 PMAX = 32.6 dBm Input Power, PIN (dBm) VDS = 2.8 V IDQ = 400 mA f = 1.8 GHz 3.0 2.5 2.0 Gate to Source Voltage, VGS (V) Drain to Source Voltage, VDS (V) 30 1.5 Efficiency/Power Added Efficiency, η, ηADD (%) 6 2000 31 VDS = 2.8 V f = 1.8 GHz PIN = 25 dBm POUT 30 1500 IDS 29 1000 100 500 50 0 0 η 28 ηADD APC 27 0.0 1.0 2.0 3.0 Gate to Source Voltage, VGS (V) 4.0 Efficiency/Power Added Efficiency, η, ηADD (%) 4 Drain Current, IDS (mA) 2 Drain Current, IDS (mA) 0 NE5510279A TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE5510279A VD = 3.5 V, IDS = 400 mA FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 S11 MAG 0.889 0.872 0.871 0.871 0.873 0.880 0.884 0.897 0.905 0.919 0.930 0.923 0.919 0.918 0.918 0.920 0.918 0.927 0.922 0.923 0.928 0.926 0.929 0.925 0.928 0.933 0.930 0.929 0.931 0.933 S21 ANG -149.7 -165.4 -170.9 -173.7 -175.6 -176.9 -177.9 -179.1 -179.9 178.1 175.9 174.2 172.9 171.8 170.6 168.9 167.5 166.2 164.1 162.6 159.9 158.6 156.6 154.5 152.2 150.4 148.4 146.2 144.4 142.6 MAG 8.66 4.41 2.91 2.13 1.69 1.37 1.17 0.99 0.87 0.77 0.69 0.60 0.54 0.48 0.44 0.41 0.36 0.35 0.31 0.30 0.26 0.25 0.22 0.22 0.20 0.20 0.16 0.17 0.16 0.15 S12 ANG 99.8 87.5 82.0 76.1 71.5 67.7 63.9 60.5 56.3 53.8 48.8 46.9 42.6 41.0 37.6 36.7 33.6 30.9 28.2 27.8 25.2 23.2 20.0 18.0 18.1 17.2 15.0 11.1 11.6 10.0 MAG 0.019 0.020 0.020 0.019 0.019 0.018 0.016 0.016 0.014 0.014 0.012 0.012 0.010 0.010 0.011 0.008 0.008 0.009 0.007 0.007 0.007 0.006 0.008 0.009 0.007 0.009 0.011 0.013 0.013 0.014 S22 ANG 14.6 3.4 -1.8 -4.1 -9.5 -11.8 -10.6 -10.2 -15.0 -7.8 -13.7 -11.0 -10.5 -4.7 -8.0 -5.5 4.3 12.5 20.9 32.4 48.5 36.8 50.0 45.1 61.4 56.3 70.0 59.4 74.0 67.5 MAG 0.854 0.861 0.875 0.869 0.886 0.886 0.893 0.898 0.914 0.928 0.938 0.927 0.923 0.922 0.924 0.927 0.922 0.935 0.932 0.942 0.928 0.938 0.935 0.945 0.941 0.938 0.933 0.952 0.937 0.950 ANG -173.8 -177.7 -178.6 -179.6 179.7 179.2 178.9 178.0 177.8 176.0 174.8 172.9 171.8 170.6 170.1 168.7 167.9 165.9 164.9 163.0 161.8 160.0 157.6 156.2 154.5 152.5 150.3 148.1 146.9 145.0 K MAG1 -0.50 -0.36 -0.25 -0.01 0.04 0.22 0.40 0.40 0.41 0.16 0.11 0.59 1.29 1.62 1.53 2.46 3.27 1.95 3.67 3.08 4.46 4.89 4.01 3.01 4.77 3.43 4.13 2.01 3.01 2.10 (dB) 26.6 23.4 21.6 20.5 19.5 18.8 18.6 17.9 17.9 17.4 17.6 17.0 14.1 12.2 11.7 10.4 8.5 10.3 7.9 8.6 6.2 6.3 5.4 6.2 4.8 5.2 2.5 5.4 3.2 4.3 Note: 1. Gain Calculation: MAG = |S21| |S12| (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE5510279A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 1.7 0.5 1.0 Gate 1.2 5.9 Drain Source Through hole φ 0.2 × 33 0.5 0.5 6.1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE