CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±20 V ID 5.5 A IDM 20 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2005.July http://www.cetsemi.com 8 - 38 CEH3456 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = 20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 3.0 V VGS = 10V, ID = 6A 1.0 35 42 mΩ VGS = 4.5V, ID = 4.9A 49 59 mΩ VDS = 15V, ID = 6A 5 S 623 pF 140 pF 67 pF 8 d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 15 VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 25 ns 2 4 ns 30 50 ns Turn-Off Fall Time tf 2 4 ns Total Gate Charge Qg 11 16 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 6A, VGS = 10V 2 nC 2 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 8 - 39 1.7 A 1.2 V CEH3456 40 40 VGS=10,9,8,7,6V 25 C ID, Drain Current (A) ID, Drain Current (A) VGS=5V 30 20 VGS=4V 10 30 20 10 0 0 0 1 2 3 4 5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 4 5 6 Figure 2. Transfer Characteristics 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=6A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 3 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 1000 1.2 1 VDS, Drain-to-Source Voltage (V) 1200 1.3 -55 C TJ=125 C VGS=3V VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 8 - 40 10 V =15V DS ID=6A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEH3456 6 4 2 0 0 2 4 6 8 10 10 10 10 10 12 2 1 1ms 10ms 100ms 1s DC RDS(ON)Limit 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 8 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 8 - 41 10 1 10 2 2