CET CEM9407A

CEM9407A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
5
-60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V.
RDS(ON) = 150mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
Parameter
TA = 25 C unless otherwise noted
Symbol
Limit
-60
Units
V
VGS
±20
V
ID
-3.7
A
IDM
-20
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
2004.June
http://www.cetsemi.com
5 - 193
CEM9407A
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -48V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -3.7A
88
108
mΩ
VGS = -4.5V, ID = -3.1A
130
150
mΩ
VDS = -5V, ID = -3.7A
-1
7
S
780
pF
170
pF
49
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
13
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
45
ns
9
30
ns
48
150
ns
Turn-Off Fall Time
tf
22
75
ns
Total Gate Charge
Qg
21
29
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -30V, ID = -3.7A,
VGS = -10V
3
nC
4
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 194
-1.3
A
-1.2
V
CEM9407A
15
15
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=10,6,5,4.5,4V
12
-VGS=3.5V
9
6
-VGS=3.0V
3
-VGS=2.5V
12
25 C
9
5
6
3
-55 C
TJ=125 C
0
0
0
1
2
3
4
5
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
5
Figure 2. Transfer Characteristics
800
600
400
Coss
200
Crss
0
0
6
12
18
24
30
2.2
1.9
ID=-3.7A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
4
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
3
-VGS, Gate-to-Source Voltage (V)
1000
1.2
2
-VDS, Drain-to-Source Voltage (V)
1200
1.3
1
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 195
10
10 V =-30V
DS
ID=-3.7A
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEM9407A
8
6
4
2
RDS(ON)Limit
10
10
10
10
0
0
6
12
18
24
2
1
1ms
10ms
100ms
1s
10s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
5 - 196
10
1
10
2
2