CEM9407A P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit -60 Units V VGS ±20 V ID -3.7 A IDM -20 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2004.June http://www.cetsemi.com 5 - 193 CEM9407A P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -48V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -3.7A 88 108 mΩ VGS = -4.5V, ID = -3.1A 130 150 mΩ VDS = -5V, ID = -3.7A -1 7 S 780 pF 170 pF 49 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -30V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 13 VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 45 ns 9 30 ns 48 150 ns Turn-Off Fall Time tf 22 75 ns Total Gate Charge Qg 21 29 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -3.7A, VGS = -10V 3 nC 4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 194 -1.3 A -1.2 V CEM9407A 15 15 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,6,5,4.5,4V 12 -VGS=3.5V 9 6 -VGS=3.0V 3 -VGS=2.5V 12 25 C 9 5 6 3 -55 C TJ=125 C 0 0 0 1 2 3 4 5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 Figure 2. Transfer Characteristics 800 600 400 Coss 200 Crss 0 0 6 12 18 24 30 2.2 1.9 ID=-3.7A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 -VGS, Gate-to-Source Voltage (V) 1000 1.2 2 -VDS, Drain-to-Source Voltage (V) 1200 1.3 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 195 10 10 V =-30V DS ID=-3.7A -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM9407A 8 6 4 2 RDS(ON)Limit 10 10 10 10 0 0 6 12 18 24 2 1 1ms 10ms 100ms 1s 10s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 5 - 196 10 1 10 2 2