600V 60A 0.045Ω
APT60N60BCS
APT60N60SCS
APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction MOSFET
COOL MOS
(B)
TO
Po we r Se miconduc tors
-24
7
D 3 PAK
• Ultra Low RDS(ON)
(S)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
D
• Avalanche Energy Rated
• Extreme dv/dt Rated
G
• Popular TO-247 or Surface Mount D3 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60N60B_SCS(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
60
Continuous Drain Current @ TC = 100°C
38
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
431
Watts
Linear Derating Factor
3.45
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
230
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
MOSFET dv/dt Ruggedness (VDS = 480V)
50
V/ns
11
Amps
Avalanche Current
2
2
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
3
3
mJ
1950
STATIC ELECTRICAL CHARACTERISTICS
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
4
TYP
MAX
UNIT
Volts
600
(VGS = 10V, ID = 44A)
0.045
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
3.9
Volts
Gate Threshold Voltage (VDS = VGS, ID = 3mA)
2.1
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
μA
4-2011
Characteristic / Test Conditions
050-7239 Rev C
Symbol
APT60N60B_SCS(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Crss
Qg
5
VGS = 10V
Gate-Source Charge
VDD = 400V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
tf
VGS = 15V
VDD = 400V
ID = 44A @ 25°C
RG = 4.3Ω
10
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
675
ID = 44A, RG = 4.3Ω
520
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
1100
ID = 44A, RG = 4.3Ω
635
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
MAX
UNIT
pF
290
150
34
50
30
20
100
RESISTIVE SWITCHING
Turn-off Delay Time
TYP
7200
8500
ID = 44A @ 25°C
Rise Time
td(off)
MIN
190
nC
ns
μJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
MAX
Continuous Source Current (Body Diode)
44
ISM
Pulsed Source Current
1
(Body Diode)
180
VSD
Diode Forward Voltage
4
(VGS = 0V, IS = - 44A)
1.2
t rr
Reverse Recovery Time (IS = -44A, dl S/dt = 100A/μs)
Q rr
Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/μs)
dv
/dt
Peak Diode Recovery dv/dt
UNIT
Amps
Volts
ns
600
17
μC
7
4
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.29
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A
4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.7
0.5
0.15
Note:
0.10
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7239 Rev C
4-2011
D = 0.9
0.25
0.20
0.3
t1
t2
0.05
0
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT60N60B_SCS(G)
140
ID, DRAIN CURRENT (AMPERES)
15, 10 & 7V
6.5V
120
6V
100
80
5.5V
60
40
5V
20
4.5V
0
200
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
50
40
30
20
10
0
25
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100 120 140
ID, DRAIN CURRENT (AMPERES)
FIGURE 4, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
I = 44A
D
V
GS
2.0
1.5
1.0
0.5
0
-50
1.10
= 10V
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
VGS = 10V @ 44A
1.30
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TRANSFER CHARACTERISTICS
60
1.40
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE
050-7239 Rev C 4-2011
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS
APT60N60B_SCS(G)
100,000
OPERATION HERE
LIMITED BY R
(ON)
DS
50
100μS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 9, MAXIMUM SAFE OPERATING AREA
I = 44A
D
14
12
VDS=120V
VDS=300V
6
VDS=480V
4
2
0
Ciss
Ciss
1,000
Coss
Coss
Crss
100
Crss
0
0
10mS
16
8
10,000
1mS
1
10
C, CAPACITANCE (pF)
100
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
250
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
230
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE
110
V
DD
100
90
td(off)
150
V
DD
R
G
= 400V
= 4.3W
T = 125°C
J
L = 100μH
100
= 400V
= 4.3W
70
tf
60
50
40
30
50
0
0
20
10
40
ID (A)
60
0
80
FIGURE 13, DELAY TIMES vs CURRENT
2000
V
DD
R
G
40
ID (A)
60
Eon
1000
Eoff
500
SWITCHING ENERGY (μJ)
includes
diode reverse recovery.
2000
Eoff
1500
Eon
1000
V
DD
D
T = 125°C
500
J
L = 100μH
on
0
20
40
60
80
ID (A)
FIGURE 15, SWITCHING ENERGY vs CURRENT
= 400V
I = 44A
E
0
80
FIGURE 14, RISE AND FALL TIMES vs CURRENT
= 400V
J
on
20
= 4.3W
L = 100μH
E
0
2500
T = 125°C
1500
tr
20
td(on)
SWITCHING ENERGY (μJ)
G
T = 125°C
J
L = 100μH
80
tr and tf (ns)
td(on) and td(off) (ns)
200
050-7239 Rev C 4-2011
R
0
includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT60N60B_SCS(G)
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(on)
td(off)
tr
TJ125°C
tf
Drain Current
Drain Voltage
90%
90%
5%
Drain Voltage
10%
10%
0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
APT60DQ60
V DD
ID
V DS
G
D.U.T.
Figure 19, Inductive Switching Test Circuit
D3PAK Package Outline
e1 SAC: Tin, Silver, Copper
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drai n
6.15 (.242) BSC
Drai n
(Heat Sink)
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
Gate
Drai n
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches
)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Source
Drai n
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7239 Rev C 4-2011
0.46 (.018)
0.56 (.022) {3 Plcs}