APT77N60JC3 0.035Ω 600V 77A Super Junction MOSFET S S • Ultra Low RDS(ON) D G • Low Miller Capacitance S • Ultra Low Gate Charge, Qg • Avalanche Energy Rated OT 22 7 "UL Recognized" file # E145592 IS OTO P ® • Extreme dv/dt Rated D • Dual die (parallel) G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID S Parameter APT77N60JC3 UNIT 600 Volts Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 77 2 Amps 231 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 568 Watts Linear Derating Factor 4.55 W/°C VGSM PD TJ,TSTG TL dv/ dt Operating and Storage Junction Temperature Range Volts -55 - to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C) 50 V/ns 20 Amps 2 IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3 1 mJ 180 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) MIN 4 TYP MAX 600 (VGS = 10V, ID = 70A) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) UNIT Volts .030 0.035 1.0 50 Ohms μA Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) 500 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±200 nA 3.9 Volts Gate Threshold Voltage (VDS = VGS, ID = 5.92mA) 2.1 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" Microsemi Website - http://www.microsemi.com 050-7146 Rev H 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT77N60JC3 Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 4400 Crss Reverse Transfer Capacitance f = 1 MHz 290 Qg Total Gate Charge 3 VGS = 10V 505 Qgs Gate-Source Charge VDD = 300V 48 Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr td(off) ID = 77A @ 25°C tf ID = 77A @ 125°C 110 165 8 12 RG = 0.9Ω Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy nC 27 VDD = 380V Eon 640 18 VGS = 10V Fall Time pF 240 RESISTIVE SWITCHING Turn-off Delay Time UNIT 13600 VGS = 0V Rise Time MAX 6 INDUCTIVE SWITCHING @ 25°C ID = 77A, RG = 5Ω 2880 6 INDUCTIVE SWITCHING @ 125°C 2300 ns 1670 VDD = 400V, VGS = 15V VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω μJ 3100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN 231 Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = - 77A) 1 t rr Reverse Recovery Time (IS = -77A, dl S/dt = 100A/μs, VR = 350V) Q rr Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/μs, VR = 350V) /dt Peak Diode Recovery dv /dt MAX 77 Continuous Source Current (Body Diode) ISM dv TYP 1.2 861 UNIT Amps Volts ns μC 46 5 6 V/ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.7 0.5 Note: 0.10 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7146 Rev H 3-2012 0.9 0.15 0.3 0.05 SINGLE PULSE 0.1 0.05 10-5 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0 10-4 °C/W 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID77A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.20 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance APT77N60JC3 200 VGS =15 &10V ID, DRAIN CURRENT (AMPERES) 180 6V & 6.5V 160 5.5V 140 120 100 5V 80 60 4.5V 40 4V 20 0 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 160 140 120 100 80 TJ = +25°C 60 40 TJ = +125°C 20 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 70 V GS 1.30 = 10V @ 47A 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 3 I = 47A D 2.5 V GS = 10V 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) NORMALIZED TO 1.15 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7146 Rev H 3-2012 ID, DRAIN CURRENT (AMPERES) 180 TJ = -55°C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, NOT USED 200 Typical Performance DC line 10 100μs 10μs 1ms 10ms 100ms 1 C, CAPACITANCE (pF) 100 Coss 1,000 100 Crss 10 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I = 77A D 12 VDS= 120V VDS= 300V 8 VDS= 480V 4 0 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) Ciss 10,000 0.1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT77N60JC3 60,000 1000 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250 600 V DD td(off) 500 400 V DD R G G = 400V = 5Ω T = 125°C J L = 100μH tf = 400V = 5Ω T = 125°C J L = 100μH 300 200 tr and tf (ns) td(on) and td(off) (ns) R 200 150 100 tr 50 100 td(on) 0 10 30 0 10 50 70 90 110 130 150 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 70 90 110 130 150 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 8000 V DD 7000 R G V DD 14000 L = 100μH EON includes diode reverse recovery. Eoff 4000 3000 Eon 2000 = 400V I = 77A D T = 125°C J L = 100μH 12000 Eoff EON includes diode reverse recovery. 10000 8000 6000 4000 Eon 2000 1000 0 10 SWITCHING ENERGY (mJ) SWITCHING ENERGY (mJ) 050-7146 Rev H 3-2012 J 5000 50 16000 = 400V = 5Ω T = 125°C 6000 30 30 50 70 90 110 130 150 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT77N60JC3 Gate Voltage T 10% 90% Gate Voltage TJ = 125 C TJ = 125 C td(on) td(off) tr Collector Current Collector Current tf 90% 90% 5% 5% 10% Collector Voltage 0 10% Collector Voltage Switching Energy Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate 050-7146 Rev H 3-2012 V DD