Data Sheet Schottky Barrier Diode RB411VA-50 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) High reliability. 0.8 0.5 2.0 1.3±0.05 TUMD2 Construction Silicon epitaxial planar Structure 0.8±0.05 0.6±0.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 2.75 8.0±0.2 3.5±0.05 4.0±0.1 1.43±0.05 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forawrd voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 50 20 0.5 3 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg φ1.0±0.2 0 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0 2.0±0.05 4.0±0.1 0.9±0.08 Unit V V A A °C °C Conditions Symbol VF 1 VF 2 IR Min. Typ. Max. Unit - - 0.50 0.30 30 V V μA IF=500mA IF=10mA VR=10V Ct - 20 - pF VR=10V , f=1MHz 1/3 2011.04 Data Sheet RB411VA-50 1000 Ta=25℃ 10000 Ta=125℃ 1000 Ta=75℃ REVERSE CURRENT:IR(uA) Ta=-25℃ 10 1 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 440 430 AVE:405.6mV σ:3.0258mV 420 AVE:432.1mV 410 220 210 200 AVE:213.2mV 80 70 60 50 40 30 20 21 20 19 18 17 AVE:19.41pF 16 IR DISPERSION MAP 30 1cyc Ifsm 15 8.3ms 10 5 AVE:6.30A 0 15 15 10 5 AVE:6.20ns trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 10 5 0 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 20 IFSM DISRESION MAP 10 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 Ct DISPERSION MAP 1 AVE:5.76uA 0 REVERSE RECOVERY TIME:trr(ns) 22 PEAK SURGE FORWARD CURRENT:IFSM(A) 23 Ta=25℃ VR=10V n=30pcs 10 20 Ta=25℃ f=1MHz VR=0V n=10pcs 100 30 90 VF DISPERSION MAP 25 20 100 190 24 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ IF=10mA n=30pcs 230 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 50 REVERSE CURRENT:IR(uA) 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 240 Ta=25℃ IF=500mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 460 10 1 0.1 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD CURRENT:IF(mA) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz Ta=75℃ 100 100 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=100mA time 300us 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.04 Data Sheet 0.5 0.4 0.4 D=1/2 0.3 Sin(θ＝180) DC 0.2 0.1 1.5 0.3 D=1/2 0.2 DC Sin(θ＝180) 0.1 0.0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.5 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) RB411VA-50 1 Io t T DC VR D=t/T VR=25V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0A 0V 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 0A 0V 1 Io t DC T VR D=t/T VR=25V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A