XBright® Power Chip LED CxxxXB900-Sx000-A Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical power packages that employ proper thermal management. FEATURES APPLICATIONS • XBright LED Technology • General Illumination • Larger “Power Chip” Design – Automobile • High Performance – Aircraft – 90 mW min. (460 & 470 nm) Blue – Decorative Lighting – 60 mW min. (505 nm) Traffic Green – Task Lighting – 40 mW min. (527 nm) Green – Outdoor Illumination • Single Wire Bond Structure • White LEDs • AuSn Backside Metalization • Backlighting • Traffic Signals CxxxXB900-Sx000-A Chip Diagram R3CM, Rev. D Datasheet: CP Top View Bottom View Die Cross Section G•SiC LED Chip 900 x 900 μm 764 μm Contact Metal Cathode (-) Width = 30 μm Bond Pad 120 μm Diameter SiC Substrate h = 250 μm InGaN Subject to change without notice. www.cree.com Anode (+) Maximum Ratings at TA = 25°C Note 1 CxxxXB900-Sx000-A DC Forward Current 500 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 700 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +85°C Storage Temperature Range -40°C to +100°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350mA Part Number Note 2 Forward Voltage (Vf, V) Note 2 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460XB900-S9000-A 3.0 3.4 3.9 10 21 C470XB900-S9000-A 3.0 3.4 3.9 10 22 C505XB900-S6000-A 3.0 3.4 3.9 10 30 C527XB900-S4000-A 3.0 3.4 3.9 10 35 Mechanical Specifications Description CxxxXB900-Sx000-A Dimension Tolerance P-N Junction Area (μm) 848 x 848 ± 25 Top Area (μm) 725 x 725 ± 25 Bottom Area (μm) 900 x 900 ± 50 Chip Thickness (μm) 250 ± 25 Top Au Bond Pad Diameter (μm) 120 ± 10 Au Bond Pad Thickness (μm) 1.2 ± 0.5 764 x 764 ± 25 1.7 ± 0.3 Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) Notes: 1. 2. 3. 4. 5. 6. Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. XB900 chips are shipped with the junction side up, requiring die transfer prior to die attach. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. CPR3CM Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxXB900-Sx000-A LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxXB900-Sx000-A) orders may be filled with any or all bins (CxxxXB290-02xx-A) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. Radiant Flux C460XB900-S9000-A C460XB900-0213-A C460XB900-0214-A C460XB900-0215-A C460XB900-0216-A C460XB900-0209-A C460XB900-0210-A C460XB900-0211-A C460XB900-0212-A C460XB900-0205-A C460XB900-0206-A C460XB900-0207-A C460XB900-0208-A C460XB900-0201-A C460XB900-0202-A C460XB900-0203-A C460XB900-0204-A 165 mW 140 mW 115 mW 90 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm Radiant Flux C470XB900-S9000-A 140 mW 115 mW C470XB900-0209-A C470XB900-0210-A C470XB900-0211-A C470XB900-0212-A C470XB900-0205-A C470XB900-0206-A C470XB900-0207-A C470XB900-0208-A C470XB900-0201-A C470XB900-0202-A C470XB900-0203-A C470XB900-0204-A 90 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Radiant Flux C505XB900-S6000-A 85 mW C505XB900-0203-A C505XB900-0204-A C505XB900-0201-A C505XB900-0202-A 60 mW 500 nm 505 nm Dominant Wavelength 510 nm Radiant Flux C527XB900-S4000-A 75 mW 55 mW C527XB900-0207-A C527XB900-0208-A C527XB900-0209-A C527XB900-0204-A C527XB900-0205-A C527XB900-0206-A C527XB900-0201-A C527XB900-0202-A C527XB900-0203-A 40 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. CPR3CM Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves, TA = 25˚C Typical Junction Temp. Curves, If = 350 mA Relative Light Intensity Forward Current vs Forward Voltage 100% 90% 350 80% 300 70% Relative Light Intensity 400 If (mA) 250 200 150 60% 50% 40% 30% 100 470nm 20% 50 10% 0 0 0.5 1 1.5 2 2.5 3 3.5 0% 4 0 Vf (V) 25 50 75 Junction Temperature (C) 100 125 Wavelength Shift Relative Intensity vs Forward Current 6.0 140 5.0 Wavelength Shift (nm) 120 100 80 % 60 4.0 3.0 2.0 470nm 40 1.0 20 0 0.0 0 50 100 150 200 250 300 350 400 0 25 50 75 Junction Temperature (C) If (mA) 100 125 Voltage Shift Dominant Wavelength Shift vs Forward Current 0.0 10 8 Voltage Shift (V) -0.1 Shift (nm) 6 4 -0.2 2 -0.3 0 470nm 470nm 527nm -2 -0.4 0 50 100 150 200 If (mA) 250 300 350 400 0 25 50 Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. CPR3CM Rev. D 75 100 125 Junction Temperature (C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com