CREE CXXXXR230-SXX00-A

XT™ Rectangular LEDs
CxxxXR230-Sxx00-A
Cree’s XT Rectangular LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single
wire bond connection. These vertically structured LED chips are approximately 150 microns in height and require a low
forward voltage. Cree’s XT Rectangular chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications for XT Rectangular LEDs include next-generation mobile appliances for
use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
•
APPLICATIONS
•
•
•
XT Rectangular LED Performance
– 460 nm & 470 nm
 XR-18™ – 18.0 mW min.
 XR-21™ – 21.0 mW min.
Thin 150 µm Chip
Low Forward Voltage – 3.2 Typical at 20 mA
Single Wire Bond Structure
•
Class 2 ESD Rating
•
Mobile Appliance LCD Backlighting
•
Digital Camera Flash
CxxxXR230-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
R3CZ Rev. Datasheet: CP
G•SiC LED Chip
230 x 380 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 150 µm
Anode (+)
Subject to change without notice.
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3
CxxxXR230-Sxx00-A
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460XR260-Sxx00-A
2.7
3.2
3.7
2
21
C470XR260-Sxx00-A
2.7
3.2
3.7
2
22
Mechanical Specifications
CxxxXR230-Sxx00-A
Description
Dimension
Tolerance
P-N Junction Area (μm)
180 x 340
± 25
Top Area (μm)
130 x 280
± 25
Bottom Area (µm)
230 x 380
± 25
Chip Thickness (μm)
150
± 15
Au Bond Pad Diameter (μm)
105
-5, +15
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (µm)
Back Contact Metal Thickness (μm)
(Au/Sn)
Note 4
140 x 300
± 15
1.7
± 0.3
Notes:
1.
2.
3.
4.
5.
6.
7.
Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds). See Cree XThin® Applications Note for more assembly process information.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright®
Applications Note for detailed packaging recommendations.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip. See Cree XThin Applications Note for more information.
Specifications are subject to change without notice.
XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree
logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc.
CPR3CZ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxXR230-Sxx00-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (C460XR230-Sxx00-A) orders may be filled with any or all bins (C460XR230-01xx-A)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.
Radiant Flux
XR-21
C460XR230-S2100-A
24.0 mW
21.0 mW
C460XR230-0117-A
C460XR230-0118-A
C460XR230-0119-A
C460XR230-0120-A
C460XR230-0113-A
C460XR230-0114-A
C460XR230-0115-A
C460XR230-0116-A
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Radiant Flux
Dominant Wavelength
C470XR230-S2100-A
C470XR230-0113-A
21.0 mW
465 nm
C470XR230-0114-A
467.5 nm
Radiant Flux
XR-18
C470XR230-0115-A
470 nm
Dominant Wavelength
C470XR230-0116-A
472.5 nm
475 nm
C460XR230-S1800-A
24.0 mW
21.0 mW
18.0 mW
C460XR230-0117-A
C460XR230-0118-A
C460XR230-0119-A
C460XR230-0120-A
C460XR230-0113-A
C460XR230-0114-A
C460XR230-0115-A
C460XR230-0116-A
C460XR230-0109-A
C460XR230-0110-A
C460XR230-0111-A
C460XR230-0112-A
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Radiant Flux
Dominant Wavelength
C470XR230-S1800-A
21.0 mW
C470XR230-0113-A
C470XR230-0114-A
C470XR230-0115-A
C470XR230-0116-A
C470XR230-0109-A
C470XR230-0110-A
C470XR230-0111-A
C470XR230-0112-A
18.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree
logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc.
CPR3CZ Rev. -
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Wavelength Shift vs Forward Current
6.00
30
5.00
25
4.00
Shift (nm)
If (mA)
20
15
3.00
2.00
10
1.00
5
0.00
0
-1.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
Vf (V)
15
20
25
30
If (mA)
Relative Intensity vs Forward Current
Relative Intensity vs Peak Wavelength
100
140
120
Relative Intensity (%)
80
% Intensity
100
80
60
40
60
40
20
20
0
0
5
10
15
20
25
30
400
If(mA)
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree
logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc.
CPR3CZ Rev. -
500
600
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com