Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2098N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol Outline BTD2098N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RθJA Tj Tstg Limits Unit 40 20 7 5 8 (Note ) 225 556 150 -55~+150 V V V A A mW °C/W °C °C Note : Single Pulse Pw≦350µs, Duty≦2%. BTD2098N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 20 7 230 150 - Typ. 0.35 150 Max. 0.1 1 0.1 1.0 800 50 Unit V V µA µA µA V MHz pF Test Conditions IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VCB=10V, IE=0 VEB=7V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2.00A VCE=6V, IE=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range BTD2098N3 Q 230~380 R 340~600 S 400~800 CYStek Product Specification Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage-(mV) VCE(SAT)@IC=30IB 100 HFE@VCE=2V 10 100 1 10 100 1000 1 10000 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Cutoff Frequency vs Collector Current 1000 250 Power Dissipation---PD(mW) CutoffF Frequency---FT(MHZ) FT@VCE=6V 100 200 150 100 50 0 1 10 Collector Current---IC(mA) BTD2098N3 10 100 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE AH S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2098N3 CYStek Product Specification