CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) Symbol Outline BTD1768A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limits Unit 100 80 5 1 2 (Note) 750 167 150 -55~+150 V V V A A mW °C/W °C °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. BTD1768A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min. 100 80 5 120 - Typ. 0.15 100 20 Max. 1 1 0.4 560 - Unit V V V µA µA V MHz pF Test Conditions IC=50µA IC=1mA IE=50µA VCB=80V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTD1768A3 Q 120~270 R 180~390 S 270~560 CYStek Product Specification Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=3V 100 HFE@VCE=2V 10 VBESAT@IC=20IB 100 VCESAT@IC=20IB 10 1 10 100 1000 1 Collector Current---IC(mA) On Voltage vs Collector Current 100 1000 Power Derating Curve 1000 Power Dissipation---PD(mW) On Voltage---(mV) 800 VBE(on)@VCE=2V 100 700 600 500 400 300 200 100 0 1 10 100 Collector Current---IC(mA) BTD1768A3 10 Collector Current---IC(mA) 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 D1768 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1768A3 CYStek Product Specification