CYSTEKEC BTD5510F3

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/5
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD5510F3
Description
The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High BVCEO
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
•Pb-free package
Equivalent Circuit
Outline
BTD5510F3
TO-263-3L
C
B
B:Base
C:Collector
E:Emitter
E
B
C
E
3
BTD5510F3
CYStek Product Specification
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 2/5
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
250
250
10
15
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VBE(sat)
*VBE(on)
*hFE
Min.
250
250
1000
Typ.
-
Max.
100
100
5
780
1.4
1.3
1.2
1.1
2
1.8
-
Unit
V
V
µA
µA
mA
mV
V
V
V
V
V
V
-
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
VCE=250V, IE=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=200mA, IB=300uA
IC=10A, IB=250mA
IC=7A, IB=50mA
IC=5A, IB=20mA
IC=4A, IB=5mA
IC=8A, IB=15mA
VCE=4V, IC=8A
VCE=10V, IC=5A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD5510F3
CYStek Product Specification
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
100000
VCE=4V
Saturation Voltage---(mV)
Current Gain---HFE
HFE
10000
1000
VCE=2V
VCE(SAT)@IC=1000IB
1000
100
100
1
10
100
1000
10000
Collector Current---IC(mA)
1
100000
VCE(SAT)@IC=250IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
100000
10000
10000
1000
100
VCE(SAT)@IC=500IB
1000
100
1
10
100
1000
10000
Collector Current ---IC(mA)
100000
1
Saturation Voltage vs Collector Current
10
100
1000
10000
Collector Current ---IC(mA)
100000
ON Voltage vs Collector Current
10000
10000
VBE(ON)@VCE=4V
VBE(SAT)@IC=250IB
ON Voltage --- (mV)
Saturation Voltage---(mV)
100
1000
10000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
100
1000
100
10
100
1000
10000
Collector Current ---IC(mA)
BTD5510F3
10
100000
10
100
1000
10000
100000
Collector Current ---IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 4/5
Characteristic Curves(Cont.)
Power Derating Curve
Power Derating Curve
70
Power Dissipation---PD(W)
Power Dissipation---PD(W)
2.5
2
1.5
1
0.5
50
40
30
20
10
0
0
0
50
100
150
Ambient Temperature ---TA(℃ )
BTD5510F3
60
200
0
50
100
150
200
Case Temperature ---TC(℃ )
CYStek Product Specification
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 5/5
CYStech Electronics Corp.
TO-263 Dimension
Marking :
D5510
B
D
2
F
α1
2
1
E
C
A
α2
Style : Pin 1.Base
3
I
2.Collector
3.Emitter
G
J
K
L
α3
H
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD5510F3
CYStek Product Specification