Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V • Complementary to BTC4102S3. Symbol Outline BTA1579S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTA1579S3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -120 -120 -5 -50 200 625 150 -55~+150 V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. -120 -120 -5 56 - Typ. 140 3.2 Max. -500 -500 -0.5 390 - Unit V V V nA nA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-100V VEB=-4V IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank K P Q R Range 56~120 82~180 120~270 180~390 BTA1579S3 CYStek Product Specification Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 HFE@VCE=5V Saturation Voltage---(mV) Current Gain---HFE 1000 100 10 VCE(SAT)@IC=10IB 100 10 0.1 1 10 100 0.1 1 10 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 100 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 0.1 100 0.1 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTA1579S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 4/4 SOT-323 Dimension 3 Marking: A Q A1 1 C Lp 2 TE 2L detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A Style: Pin 1.Base 2.Emitter 3.Collector 2 mm 1 scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1579S3 CYStek Product Specification