CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA. • Complementary to BTPA94N3 Symbol Outline BTNA44N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limit Unit 400 400 6 300 225 (Note) 556 150 -55~+150 V V V mA mW °C/W °C °C Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA44N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 hFE 2 *hFE 3 *hFE 4 fT Cob Min. 400 400 6 40 52 45 40 20 - Typ. 0.1 - Max. 10 10 0.4 0.5 0.75 1.5 270 7 Unit V V V µA µA V V V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V. IE=0 VEB=6V,IC=0 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range BTNA44N3 K 52~120 P 82~180 Q 120~270 CYStek Product Specification Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage-(mV) Current Gain---HFE HFE@VCE=10V 100 VCESAT@IC=10IB 1000 100 10 10 0.1 1 10 100 0.1 1000 100 1000 Power Derating Curve Saturation Voltage vs Collector Current 250 Power Dissipation---PD(mW) 10000 Saturation Voltage-(mV) 10 Collector Current ---IC(mA) Collector Current ---IC(mA) VBESAT@IC=10IB 1000 200 150 100 50 0 100 0.1 1 10 100 Collector Current--- IC(mA) BTNA44N3 1 1000 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) CYStek Product Specification Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE 3D S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA44N3 CYStek Product Specification