CYStech Electronics Corp. Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 1/4 Low VCE(sat) NPN Epitaxial Planar Transistor BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772AM3 Symbol Outline BTD882AM3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Storage Temperature Tj Tstg Limit Unit 80 50 5 3 7 (Note 1) 600 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 V V V A A mW W W °C/W °C/W °C/W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm BTD882AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 80 50 5 120 160 100 - Typ. 0.25 90 45 Max. 1 1 0.5 2 820 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V. IE=0 VEB=3V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range BTD882AM3 P 160~320 E 270~560 T 390~820 CYStek Product Specification Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation voltage vs Collector current Current gain vs Collector current 1000 1000 VCE(sat) Saturation voltage---(mV) Current gain---HFE VCE=5V VCE=2V 100 VCE=1V 100 IC=40IB 10 IC=10IB 1 10 1 10 100 1000 Collector current---IC(mA) 1 10000 Saturation votlage vs Collector current 10 100 1000 Collector current---IC(mA) 10000 Power Derating Curves 2.5 10000 Power Dissipation---PD(W) VBE(sat)@IC=10IB Saturation voltage---(mV) IC=20IB 1000 See Note 2 on page 1 2 1.5 See Note 3 on page 1 1 0.5 0 100 1 10 100 1000 Collector current---IC(mA) BTD882AM3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C CF D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882AM3 CYStek Product Specification