CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC(DC)=5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Storage Temperature Tj Tstg Limit Unit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 V V V A A W W W °C/W °C/W °C/W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm BTC5103M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 fT Min. 80 60 5 82 80 - Typ. 0.3 8 Max. 10 5 10 1 1.5 1.5 390 - Unit V V V µA mA µA V V V MHz Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=60V. IE=0 VCE=60V. IB=0 VEB=5V,IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=1A VCE=5V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=500mA, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank P Q R Range 82~180 120~270 180~390 BTC5103M3 CYStek Product Specification Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 VCE=4V 100 VCE=2V 10 VBE(SAT)@IC=10IB 1000 100 VCE(SAT)@IC=10IB 10 1 10 100 1000 10000 1 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) On Voltage vs Collector Current Power Derating Curves 10000 2.5 Power Dissipation---PD(W) On Voltage---VBE(ON)(mV) 10 VCE=2V 1000 100 See Note 3 on page 1 2 See Note 2 on page 1 1.5 1 0.5 0 1 BTC5103M3 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---Ta(℃) 200 CYStek Product Specification Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C 053 D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC5103M3 CYStek Product Specification