CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package Symbol Outline TO-126ML BTD882D3 B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits Unit 50 50 5 3 7 (Note) 1 10 150 -55~+150 V V V A W °C °C Note : Pulse test, pulse width≤380µs, duty cycle≤2%. BTD882D3 CYStek Product Specification Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 2/4 CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 150 180 100 - Typ. 0.25 90 45 Max. 1 1 0.5 2 820 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f =100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range R 180~390 S 270~560 T 390~820 Characteristic Curves Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 700 500uA 120 Collector Current---IC(mA) Collector Current---IC(mA) 140 400uA 100 80 300uA 60 200uA 40 100uA 20 IB=0uA 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) BTD882D3 2.5mA 600 500 2mA 400 1.5mA 300 1mA 200 500uA 100 IB=0uA 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) CYStek Product Specification Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 3500 Collector Current---IC(mA) Collector Current---IC(mA) 2500 10mA 2000 8mA 1500 6mA 1000 4mA 500 2mA 25mA 3000 20mA 2500 15mA 2000 10mA 1500 5mA 1000 500 IB=0mA IB=0mA 0 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current gain vs Collector current Saturation voltage vs Collector current 1000 1000 Saturation voltage---(mV) Current gain---HFE VCE(sat) VCE=5V 100 VCE=2V VCE=1V 10 100 IC=40IB 10 IC=10IB 1 1 10 100 1000 10000 1 Collector current---IC(mA) 100 1000 10000 Power Derating Curve 1.2 Power Dissipation---PD(W) 10000 Saturation voltage---(mV) 10 Collector current---IC(mA) Saturation votlage vs Collector current VBE(sat)@IC=10IB 1000 100 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 Collector current---IC(mA) BTD882D3 IC=20IB 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-126ML Dimension Marking: D882 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494 DIM A B C D Φ1 Φ2 F G Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 3.10 3.30 3.00 3.20 1.87 2.12 0.74 1.25 DIM H I J K L M N O Inches Min. Max. 0.0462 0.0562 *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. 1.17 1.42 *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882D3 CYStek Product Specification