Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.04.12 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Symbol Outline BTN3501J3 TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTN3501J3 CYStek Product Specification Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.04.12 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 - Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 - Unit V µA µA V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 5000 2000 8mA 1500 6mA 1000 4mA 500 2mA 25mA 4500 10mA Collector Current---IC(mA) Collector Current---IC(mA) 2500 4000 20mA 3500 15mA 3000 2500 10mA 2000 1500 5mA 1000 IB=0mA 500 IB=0mA 0 0 0 2 4 Collector To Emitter Voltage---VCE(V) 6 0 Grounded Emitter Output Characteristics 2 3 4 5 6 Grounded Emitter Output Characteristics 140 700 500uA 120 2.5mA Collector Current---IC(mA) Collector Current---IC(mA) 1 Collector To Emitter Voltage---VCE(V) 400uA 100 80 300uA 60 200uA 40 100uA 20 0 1 2 3 4 Collector To Emitter Voltage---VCE(V) BTN3501J3 5 2mA 500 400 1.5mA 300 1mA 200 500uA 100 IB=0uA IB=0uA 0 600 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) CYStek Product Specification Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp. Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE(SAT) Saturation Voltage---(mV) VCE = 5V Current Gain---H FE Revised Date :2004.04.12 Page No. : 3/4 VCE = 2V 100 VCE = 1V 1000 IC = 20IB IC = 50IB 100 IC = 10IB 10 10 1 10 100 1000 1 10000 100 1000 10000 Collector Current---I C(mA) Collector Current---I C(mA) Saturation Voltage vs Collector Current Power Derating Curve 10000 2 VCE(SAT) @ IC = 10IB Power Dissipation---P D(W) Saturation Voltage---(mV) 10 1000 1.75 1.5 1.25 1 0.75 0.5 0.25 100 0 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---I C(mA) Power Derating Curve Power Dissipation---P D(W) 25 20 15 10 5 0 0 BTN3501J3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2004.04.12 Page No. : 4/4 TO-252 Dimension C A Marking: D B N3501 G F L 3 H E 2 K Style: Pin 1.Base 2.Collector 3.Emitter I 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 1 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501J3 CYStek Product Specification