CYStech Electronics Corp. Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050N3 Description The BTN8050N3 is designed for general purpose low frequency amplifier applications. Features • High collector current , IC = 0.8A • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTP8550N3. Symbol Outline BTN8050N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits Unit 30 20 5 800 1.5 (Note) 225 150 -55~+150 V V V mA A W °C °C Note : Single pulse, Pw=10ms BTN8050N3 CYStek Product Specification Spec. No. : C223N3-H Issued Date : 2004.03.03 CYStech Electronics Corp. Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 30 - - V IC=50µA, IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=50µA, IC=0 ICBO - - 100 nA VCB=20V, IE=0 IEBO - - 100 nA VEB=4V, IC=0 *VCE(sat) 1 - - 0.3 V IC=400mA, IB=20mA *VCE(sat) 2 - - 0.4 V IC=800mA, IB=80mA VBE(on) - - 1 V VCE=1V, IC=150mA *hFE 1 100 - 500 - VCE=1V, IC=150mA *hFE 2 80 - - - VCE=2V, IC=800mA fT - 150 - MHz Cob - 15 - pF VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank C D E Range 100~200 150~300 250~500 BTN8050N3 CYStek Product Specification Spec. No. : C223N3-H Issued Date : 2004.03.03 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V 100 VCE = 1V 10 100 VCE(SAT) @ IC=20IB 10 VCE(SAT) @ IC=10IB 1 1 10 100 1000 Collector Current---IC(mA) 1 10000 Saturation Voltage vs Collector Current 10000 On Voltage vs Collector Current 10000 1000 VBE(SAT) @ IC=10IB On Voltage---(mV) Saturation Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 100 VBE(ON) @ VCE=1V 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BTN8050N3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 4/4 SOT-23 Dimension A L Marking: 3 B S TE D9 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style: Pin 1.Base 2.Emitter 3.Collector J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050N3 CYStek Product Specification