CYStech Electronics Corp. Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1664M3 Features • The BTD1664M3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTB1132M3 Symbol Outline BTD1664M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits Unit 40 20 5 800 1.5 (Note 1) 0.5 2 (Note 2) 150 -55~+150 V V V mA A W W °C °C Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%. 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. BTD1664M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 20 5 82 82 80 - Typ. 0.15 0.2 0.25 150 15 Max. 0.5 0.5 0.3 0.4 0.5 1 560 560 - Unit V V V µA µA V V V V MHz pF Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=20V. IE=0 VEB=4V,IC=0 IC=400mA, IB=20mA IC=500mA, IB=50mA IC=800mA, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=800mA VCE=5V, IE=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE2 Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage---(mV) HFE@VCE=2V VCE(SAT)@IC=20IB 100 10 100 0.1 1 10 100 Collector Current--- IC(mA) BTD1664M3 1000 1 10 100 1000 Collector Current ---IC(mA) CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=20IB 100 FT@VCE=2V 0.1 1 10 100 Collector Current ---IC(mA) 1000 1 10 Collector Current---IC(mA) 100 Power Derating Curve Power Dissipation---PD(mW) 2.5 2 See Note 2 on page 1 1.5 1 0.5 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTD1664M3 CYStek Product Specification Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C BS* D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1664M3 CYStek Product Specification