CYStech Electronics Corp. Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA42N3 Description • High breakdown voltage. (BVCEO=300V) • Low collector output capacitance. (Typ. 3pF at VCB =30V) • Ideal for chroma circuit. Symbol Outline BTNA42N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits Unit 300 300 6 500 225 (Note) 556 150 -55~+150 V V V mA mW ℃/W °C °C Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA42N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 52 40 50 - Typ. 0.1 2 Max. 100 100 0.5 2. 0.9 270 3.0 Unit V V V nA nA V V V MHz pF Test Conditions IC=50µA IC=1mA IE=50µA VCB=200V VEB=6V IC=20mA, IB=2mA IC=30mA, IB=1.5mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range K 52~120 P 82~180 Q 120~270 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=10V 100 1000 100 10 10 0.1 1 10 Collector Current ---IC(mA) BTNA42N3 100 0.1 1 10 100 Collector Current--- IC(mA) CYStek Product Specification Spec. No. : C209N3-H Issued Date : 2003.06.12 CYStech Electronics Corp. Saturation Voltage vs Collector Current Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB 100 FT@VCE=30V 0.1 0.1 1 10 100 Collector Current ---IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTNA42N3 CYStek Product Specification Spec. No. : C209N3-H Issued Date : 2003.06.12 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension A Marking: L 3 B 1D TE S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style: Pin 1.Base 2.Emitter 3.Collector J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA42N3 CYStek Product Specification