Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92A3 Description • High breakdown voltage. (BVCEO=-300V) • Low collector output capacitance. • Ideal for chroma circuit. Symbol Outline BTPA92A3 TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTPA92A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -300 -300 -5 -500 625 200 150 -55~+150 V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C308A3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE 1 *hFE 2 *hFE 3 fT Cob Min. -300 -300 -5 25 56 25 50 - Typ. - Max. -0.25 -0.1 -0.5 -0.9 270 6 Unit V V V µA µA V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-100µA VCB=-200V VEB=-3V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank K 56~120 Range P Q 82~180 120~270 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=10V 100 10 100 10 0.1 1 10 Collector Current---IC(mA) BTPA92A3 1000 100 0.1 1 10 100 Collector Current---IC(mA) CYStek Product Specification Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Saturation Voltage vs Collector Current Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB 100 FT@VCE=30V 0.1 0.1 1 10 100 1000 Collector Current---IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTPA92A3 CYStek Product Specification Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension α2 A Marking: B 1 2 3 A92 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTPA92A3 CYStek Product Specification