DAESAN KBJ2A

CURRENT 4.0 Amperes
VOLTAGE 50 to 1000 Volts
KBJ2A THRU KBJ2M
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength
· Low Reverse Leakage Current
· High s urge current capability
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
0.825 (20.9)
0.815 (20.7)
0.125 (3.17)
x 45 degrees
C hamfer
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
Mechanical Data
C as e: Molded plas tic body over pas s ivated junctions
Terminals : P lated leads s olderable per MIL-S T D-750,
Method 2026
High temperature s oldering guaranteed:
260 ℃/10 s econds , 0.375" (9.5mm) lead length,
5lbs. (2.3kg) tens ion
Mounting Pos ition: Any
Weight: 0.071 oz., 2.0 g
P ackaging c odes /options :
1/400 E A. per B ulk Tray S tack
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.050 (1.27)
0.040 (1.02)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
P olarity shown on front side of case, positive lead beveled corner.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
KBJ
2A
KBJ
2B
KBJ
2C
KBJ
2G
KBJ
2J
KBJ
2K
KBJ
2M
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRMM
VRWM
VR
50
100
200
400
600
800
1000
Volts
RMS Reverse voltage
VR(RMS)
35
70
140
280
420
560
700
Volts
Ma ximum a vera ge forwa rd @ T C =50 ℃
R ectified output current a t
@ T A =40 ℃
Io
4.0
3.0
Amps
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load per element (JEDEC method)
IFSM
150
Amps
VFM
1.0
Volts
Forward Voltage (per element)
@ IF=4.0 A
Peak Reverse Current at Rated
DC Blocking Voltage
@ TC=25℃
@ TC=125℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance,
Junction to Case (Note 2)
Operating and Storage Temperature Range
IRM
5.0
500
μA
Cj
40
pF
RθJC
22
℃/W
Tj
TSTG
-55 to +150
Notes:
(1) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 16mm aluminum plate heat sink.
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
℃
RATING AND CHARACTERISTIC CURVES KBJ2A THRU KBJ2M
F ig. 2 -- Maximum Non-R epetitive P eak
F orward S urge C urrent P er L eg
5.0
60 Hz R es is tive or Inductive Load
Heat-S ink Mounting
3.0 x 3.0 x 0.11" T hick
(7.5 x 7.5 x 0.3cm)
Aluminum P late
4.0
3.0
2.0
P.C .B . Mounting
0.47 x 0.47" (12 x 12mm)
C opper pads with 0.375"
(9.5mm) lead length
1.0
P eak F orward S urge C urrent (A)
Average F orward Output C urrent (A)
F ig. 1 -- Derating C urves Output
R ec tified C urrent
0
150
T J = T J max.
S ingle S ine-Wave
(J E DE C Method)
100
50
1.0 C ycle
0
0
50
100
10
1
150
F ig. 4 -- Typic al R evers e L eakage
C harac teris tic s P er L eg
100
Ins tantaneous R evers e C urrent (A)
Ins tantaneous F orward C urrent (A)
F ig. 3 -- Typic al F orward Voltage
C harac teris tic s P er L eg
10
1
0.1
T J = 25 ℃
P uls e width = 300 s
1% Duty C ycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
500
100
0.1
T A = 25 ℃
0.01
0
1.6
100
50 --- 400V
600 --- 1000V
R evers e Voltage (V )
80
60
100
F ig. 6 -- Typic al Trans ient T hermal
Impedanc e P er L eg
Trans ient T hermal Impedance ( C /W)
J unction C apacitance (pF )
T J = 25 ℃
f = 1.0MHz
V s ig = 50mV p-p
10
40
20
P ercent of R ated P eak R evers e Voltage (V )
1,000
1
50 --- 400V
600 --- 1000V
1
F ig. 5 -- Typic al J unc tion C apac itanc e
P er L eg
0.1
T A = 125 ℃
10
Ins tantaneous F orward Voltage (V )
10
100
Number of C ycles at 60Hz
Ambient Temperature ( ℃)
100
100
10
1
0.1
0.01
0.1
1
10
t, Heating Time (s ec.)
100