CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts KBJ2A THRU KBJ2M Features · Glass Passivated Die Construction · High Case Dielectric Strength · Low Reverse Leakage Current · High s urge current capability · Ideal for Printed Circuit Board Applications · Plastic Material - UL Flammability Classification 94V-0 0.825 (20.9) 0.815 (20.7) 0.125 (3.17) x 45 degrees C hamfer 0.421 (10.7) 0.411 (10.4) 0.080 (2.03) 0.060 (1.50) 0.098 (2.5) 0.075 (1.9) 0.095 (2.41) 0.080 (2.03) 0.098 (2.5) 0.075 (1.9) Mechanical Data C as e: Molded plas tic body over pas s ivated junctions Terminals : P lated leads s olderable per MIL-S T D-750, Method 2026 High temperature s oldering guaranteed: 260 ℃/10 s econds , 0.375" (9.5mm) lead length, 5lbs. (2.3kg) tens ion Mounting Pos ition: Any Weight: 0.071 oz., 2.0 g P ackaging c odes /options : 1/400 E A. per B ulk Tray S tack 0.718 (18.2) 0.682 (17.3) Lead Depth 0.022 (0.56) 0.018 (0.46) 0.050 (1.27) 0.040 (1.02) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) 0.030 (0.76) 0.140 (3.56) 0.128 (3.25) 0.022 (0.56) 0.018 (0.46) P olarity shown on front side of case, positive lead beveled corner. Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Symbols KBJ 2A KBJ 2B KBJ 2C KBJ 2G KBJ 2J KBJ 2K KBJ 2M Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRMM VRWM VR 50 100 200 400 600 800 1000 Volts RMS Reverse voltage VR(RMS) 35 70 140 280 420 560 700 Volts Ma ximum a vera ge forwa rd @ T C =50 ℃ R ectified output current a t @ T A =40 ℃ Io 4.0 3.0 Amps Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load per element (JEDEC method) IFSM 150 Amps VFM 1.0 Volts Forward Voltage (per element) @ IF=4.0 A Peak Reverse Current at Rated DC Blocking Voltage @ TC=25℃ @ TC=125℃ Typical Junction Capacitance (Note 1) Typical Thermal Resistance, Junction to Case (Note 2) Operating and Storage Temperature Range IRM 5.0 500 μA Cj 40 pF RθJC 22 ℃/W Tj TSTG -55 to +150 Notes: (1) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 16mm aluminum plate heat sink. (2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. ℃ RATING AND CHARACTERISTIC CURVES KBJ2A THRU KBJ2M F ig. 2 -- Maximum Non-R epetitive P eak F orward S urge C urrent P er L eg 5.0 60 Hz R es is tive or Inductive Load Heat-S ink Mounting 3.0 x 3.0 x 0.11" T hick (7.5 x 7.5 x 0.3cm) Aluminum P late 4.0 3.0 2.0 P.C .B . Mounting 0.47 x 0.47" (12 x 12mm) C opper pads with 0.375" (9.5mm) lead length 1.0 P eak F orward S urge C urrent (A) Average F orward Output C urrent (A) F ig. 1 -- Derating C urves Output R ec tified C urrent 0 150 T J = T J max. S ingle S ine-Wave (J E DE C Method) 100 50 1.0 C ycle 0 0 50 100 10 1 150 F ig. 4 -- Typic al R evers e L eakage C harac teris tic s P er L eg 100 Ins tantaneous R evers e C urrent (A) Ins tantaneous F orward C urrent (A) F ig. 3 -- Typic al F orward Voltage C harac teris tic s P er L eg 10 1 0.1 T J = 25 ℃ P uls e width = 300 s 1% Duty C ycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 500 100 0.1 T A = 25 ℃ 0.01 0 1.6 100 50 --- 400V 600 --- 1000V R evers e Voltage (V ) 80 60 100 F ig. 6 -- Typic al Trans ient T hermal Impedanc e P er L eg Trans ient T hermal Impedance ( C /W) J unction C apacitance (pF ) T J = 25 ℃ f = 1.0MHz V s ig = 50mV p-p 10 40 20 P ercent of R ated P eak R evers e Voltage (V ) 1,000 1 50 --- 400V 600 --- 1000V 1 F ig. 5 -- Typic al J unc tion C apac itanc e P er L eg 0.1 T A = 125 ℃ 10 Ins tantaneous F orward Voltage (V ) 10 100 Number of C ycles at 60Hz Ambient Temperature ( ℃) 100 100 10 1 0.1 0.01 0.1 1 10 t, Heating Time (s ec.) 100