RC FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER SMALL SIZE LOW LEAKAGE HIGH TEMPERATURE STABILITY HIGH SURGE CAPABILITY EDI Type PRV Volts Maximum Reverse RECOVERY TIME IN NANOSECONDS (Fig.4) RC05 RC10 RC20 RC40 RC60 RC80 RC100 50 100 200 400 600 800 1000 200 200 200 200 200 200 200 o ELECTRICAL CHARACTERISTICS(at T A =25 C Unless Otherwise Specified) o Average Rectif ied Forward Current @ 50 C, IO 1 Amp Max. Peak Surge Current , IFSM (8.3 ms) 50 Amp Max. Forward Voltage Drop @ 1 Amp, VF 1.4V olts o Max. DC Reverse Current @ P RV and 25 C, IR o Max. DC Reverse Current @ PRV and100 C, IR 1 A 50 A Trr (Reverse Recovery time), Fig. 4 200 nanosec Max 125nanosec Typical Ambient Operating Temperature Range, TA -55 oC to +150 oC Storage Temperature Range, TSTG -55 oC to +175 oC NOTE: Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C RC FIG.1 FIG.2 OUTPUT CURRENT vs AMBIENT TEMPERATURE NON-REPETITIVE SURGE CURRENT 100 75 75 % MAXIMUM SURGE % RATED FWD CURRENT 0.1SEC 100 50 25 1.0SEC 50 25 0 0 0 25 50 75 100 125 1 150 2 3 4 O 5 6 7 8 9 10 20 30 40 50 60 CYCLES(60 Hz) AMBIENT TEMPERATURE ( C) FIG.3 .030 DIA. .033 1.0 MIN. 1.0 MIN. .380 MAX. .160 MAX. TEST CIRCUIT FIG.4 TYPICAL REVERSE RECOVERY WAVEFORM R1 50 OHM ZERO - REFERENCE 0.5A D.U.T. + T RR 1.0A 0.25A PULSE GENERATOR R2 1 OHM SCOPE R1, R2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV . I KC REP.RATE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR EDI reserves the right to change these specifications at any time whthout notice. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 Ee-mail:[email protected] * Wwebsite:http:// www.edidiodes.com * FAX 914-965-5531 * 1-800-678-0828