RVF FAST RECOVERY - HIGH VOLTAGE HIGH CURRENT SILICON RECTIFIERS MATCHED SILICON RECTIFIER ELEMENTS DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 40,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. Peak Reverse Voltage PRV (V olts) Average Rectified Current @55 o C@100 o C Amps Max. Fwd Voltage Length L Fig.3 Inches MM @25 oC I F =0.5 ADC (Volts) RVF5 5,000 0.50 0.33 9 1.25 31.75 RVF8 8,000 0.33 12 1.75 44.45 0.33 15 2.00 50.80 RVF10 10,000 0.50 0.50 RVF12.5 12,500 0.50 0.33 20 2.50 63.50 RVF15 15,000 0.50 0.33 23 3.00 76.20 RVF20 20,000 0.40 0.27 30 4.00 101.60 RVF25 25,000 0.40 0.27 38 4.50 114.30 RVF30 30,000 0.40 0.27 45 5.50 139.70 RVF40 40,000 0.40 0.27 60 7.00 177.80 ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified) o 0.1 A o 15 Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and 100 C, IR A Ambient Operating Temperature Range,TA -55 oC to +150 oC Storage Temperature Range, TSTG -55 oC to +150 oC Max.One-Half Cycle Surge Current, I FM (Surge )@ 60Hz 50 Amps Forward Voltage Repetitive Peak,I FRM 2 Amps Max. Reverse Recovery Time , Trr (Fig.4) 150 nanoseconds EDI reserves the right to change these specifications at any time without notice. RVF FIG.2 FIG.1 NON-REPETITIVE SURGE CURRENT RATINGS OUTPUT CURRENT vs AMBIENT TEMPERATURE 0.1SEC 1.0SEC 100 500 RVF 5-15 400 % MAXIMUM SURGE AVG. RECTIFIED D.C. CURRENT MILLAMPERES 600 300 200 RVF 20-40 100 75 50 25 0 0 25 50 75 100 125 150 175 1 3 2 5 6 7 8 9 10 4 20 30 40 50 60 O AMBIENT TEMP( C ) CYCLES(60 Hz) FIG.3 PACKAGE STYLE A E _ L + B C LTR INCHES MILLIMETERS A B .051 DIA. + _ .03 2.0 MIN. 0.31 MAX. 1.30 DIA. + _ .76 50.8 MIN. 7.9 MAX. 19.30 MAX. C D E D 0.76 MAX. It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to prevent damage form excess heat. FIG.4 TEST CIRCUIT TYPICAL REVERSE RECOVERY WAVEFORM R1 50 OHM + T RR ZERO REFERENCE 0.5A D.U.T. 1.0A 0.25A PULSE GENERATOR R2 1 OHM SCOPE R1, R2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV. IKC REP.RATE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR Prior to the manufacture of these assemblies, the individual silicon junction is measured for maximum recovery time in the test circuit shown. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 Ee-mail:[email protected] * Wwebsite: http://www.edidiodes.com * FAX 914-965-5531 * 1-800-678-0828