APT60GL120JU3 ISOTOP® Buck chopper Trench + Field Stop IGBT4 Power module Application • AC and DC motor control • Switched Mode Power Supplies C G E A A E G VCES = 1200V IC = 60A @ Tc = 80°C C Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Low conduction losses • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP® Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 80 60 100 ±20 280 Tj = 150°C 100A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W May, 2010 Parameter Collector - Emitter Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT60GL120JU3 – Rev 1 Symbol VCES APT60GL120JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 50A TJ = 25°C RG = 8.2Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 2770 205 160 pF 0.38 µC 130 20 300 45 ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 www.microsemi.com Max Unit V µA A 3.1 V May, 2010 IRM Test Conditions ns nC 2-5 APT60GL120JU3 – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT60GL120JU3 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.53 1.2 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 APT60GL120JU3 – Rev 1 May, 2010 ISOTOP® is a registered trademark of ST Microelectronics NV APT60GL120JU3 Typical Performance Curve Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 20 VGE=15V 40 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 VCE = 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 0 2 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration D = 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 IGBT May, 2010 0.5 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APT60GL120JU3 – Rev 1 Thermal Impedance (°C/W) 0.6 APT60GL120JU3 Forward Characteristic of diode 80 VCE=600V D=50% RG=8.2 Ω TJ=150°C Tc=75°C ZCS 100 75 50 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 125 ZVS 25 Hard switching 60 TJ=125°C TJ=25°C 40 20 0 0 10 20 30 40 50 60 70 80 0 90 IC (A) 0.5 1 1.5 2 2.5 3 3.5 4 VF, Anode to Cathode Voltage (V) Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.8 0.6 0.4 0.2 D = 0.9 DIODE 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 May, 2010 Rectangular Pulse Duration in Seconds Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT60GL120JU3 – Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein