APT50GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT® K Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch C Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration G E K Benefits • Low conduction losses • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 80°C Max ratings 1200 75 50 100 ±20 347 27 34 Unit V A V W June, 2006 C G A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-7 APT50GT120JU2 – Rev 1 E VCES = 1200V IC = 50A @ Tc = 80°C APT50GT120JU2 All ratings @ Tj = 25°C unless otherwise specified VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 2mA VGE = ±20V, VCE = 0V Min Typ 1.4 1.7 2.0 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 18Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 18Ω 5.0 Typ 3600 188 163 85 30 420 65 90 45 520 90 6.6 5.8 Max 5 2.1 Unit mA 6.5 500 V nA Max Unit V pF ns ns mJ June, 2006 Symbol Characteristic ICES Zero Gate Voltage Collector Current www.microsemi.com 2-7 APT50GT120JU2 – Rev 1 Electrical Characteristics APT50GT120JU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 31 IF = 30A VR = 800V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 370 500 5 12 660 3450 220 4650 37 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 800V di/dt =1000A/µs Min 250 500 Tj = 125°C Characteristic Min Typ IGBT Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Max 2.5 32 Thermal and package characteristics Symbol Typ 2.0 2.3 1.8 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Unit V µA pF ns A nC ns nC A Max 0.36 1.1 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g Operating Frequency vs Collector Current 60 V CE =600V D=50% RG=18 Ω TJ =125°C 50 40 June, 2006 30 20 10 0 0 10 20 30 40 50 60 70 80 IC (A) www.microsemi.com 3-7 APT50GT120JU2 – Rev 1 Fmax, Operating Frequency (kHz) Typical IGBT Performance Curve APT50GT120JU2 Output Characteristics (VGE=15V) 100 TJ=125°C VGE =17V 75 IC (A) IC (A) TJ = 125°C TJ=25°C 75 Output Characteristics 100 50 25 VGE=15V 50 VGE =9V 25 0 0 0 1 2 3 4 0 1 V CE (V) 3 4 20 V CE = 600V VGE = 15V RG = 18 Ω TJ = 125°C TJ=25°C 16 75 TJ=125°C E (mJ) IC (A) 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 100 50 25 12 Eon 8 Eoff 4 0 0 5 6 7 8 9 V GE (V) 10 11 0 12 25 50 75 100 IC (A) Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 12 120 Eon V CE = 600V V GE =15V IC = 50A TJ = 125°C 8 100 80 Eoff IC (A) 10 E (mJ) VGE =13V 6 60 4 40 2 20 0 VGE=15V TJ=125°C RG=18 Ω 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.25 0.2 0.15 IGBT 0.9 0.7 0.5 June, 2006 0.35 0.3 0.1 0.05 0 0.00001 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-7 APT50GT120JU2 – Rev 1 Thermal Impedance (°C/W) 0.4 APT50GT120JU2 www.microsemi.com 5-7 APT50GT120JU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 6-7 APT50GT120JU2 – Rev 1 June, 2006 APT50GT120JU2 APT50GT120JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APT50GT120JU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)