AP730P Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 400V ▼ Repetitive Avalanche Rated RDS(ON) 1.0Ω ▼ Fast Switching ID 5.5A ▼ Simple Drive Requirement G D TO-220 S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. D The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits. G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 400 V VGS Gate-Source Voltage ± 30 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 5.5 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 3.5 A 1 IDM Pulsed Drain Current 23 A PD@TC=25℃ Total Power Dissipation 74 W 0.59 W/℃ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 260 mJ IAR Avalanche Current 5.5 A EAR Repetitive Avalanche Energy 7 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.7 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice 200219032 AP730P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 400 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.36 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.75A - - 1 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.75A - 30 - S VDS=400V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=320V, VGS=0V - - 100 uA Gate-Source Leakage VGS= ± 30V - - ±100 nA ID=5.5A - 35 - nC VGS=0V, ID=250uA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=320V - 3.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC VDD=200V - 8 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=5.5A - 20 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 47 - ns tf Fall Time RD=36Ω - 18 - ns Ciss Input Capacitance VGS=0V - 565 - pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 38 - pF Min. Typ. - - 5.5 A - - 23 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 3 Forward On Voltage 1 Tj=25℃, IS=5.5A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=5.5A. 3.Pulse width <300us , duty cycle <2%. Max. Units AP730P 4 7 T C =25 o C T C =150 o C V G =10V 6 V G =10V V G =7.0V V G =7.0V V G =6.0V 3 ID , Drain Current (A) ID , Drain Current (A) V G =6.0V 5 4 3 V G =5.0V 2 V G =5.0V 2 1 V G =4.0V 1 V G =4.0V 0 0 0 2 4 6 8 10 12 14 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 I D =2.75A V G =10V 2.5 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 2 1.5 1 0.9 0.5 0 0.8 -50 0 50 100 o T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP730P 6 80 5 4 PD (W) ID , Drain Current (A) 60 3 40 2 20 1 0 0 25 50 75 100 125 150 0 50 100 150 T c , Case Temperature ( o C ) o T c , Case Temperature ( C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 100 Normalized Thermal Response (R thjc) DUTY=0.5 10 ID (A) 10us 100us 1 1ms 10ms T c =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 0.01 T SINGLE PULSE Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms 0 0.01 1 10 100 1000 V DS (V) Fig 7. Maximum Safe Operating Area 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP730P f=1.0MHz 10000 16 I D =5.5A V DS =80V 12 V DS =120V 10 Ciss V DS =160V C (pF) VGS , Gate to Source Voltage (V) 14 8 100 Coss 6 Crss 4 2 0 1 0 5 10 15 20 25 30 35 40 45 50 1 11 21 31 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3.6 10 T j = 25 o C 3.1 VGS(th) (V) IS (A) T j = 150 o C 1 2.6 0.1 2.1 1.6 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 o T j , Junction Temperature ( C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP730P VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.5x RATED VDS G + 10% VGS S 10 V VGS - td(on) Fig 13. Switching Time Circuit tr td(off) tf Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q