ET- 830
N-Channel MOSFET
Features
RDS(on) (Max 1.4 Ω )@VGS=10V
■
Gate Charge (Typical 25nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
2. Drain
{
Symbol
■
●
◀
1. Gate{
▲
●
●
{
General Description
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
3. Source
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
500
V
Continuous Drain Current(@TC = 25°C)
5.0
A
Continuous Drain Current(@TC = 100°C)
3.0
A
20
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
(Note 1)
EAS
Single Pulsed Avalanche Energy
(Note 2)
292
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
8.75
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
TSTG, TJ
TL
Total Power Dissipation(@TC = 25 °C)
87.5
W
Derating Factor above 25 °C
0.70
W/°C
- 55 ~ 150
°C
300
°C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Value
Parameter
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
1.43
°C/W
RθCS
Thermal Resistance, Case to Sink
-
0.5
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Ver.00/21.08.2009
IFP830-TSe.doc
Page 1 of 2
BEIJING ESTEK ELECTRONICS CO.,LTD
ET- 830
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.50
--
V/°C
VDS = 500 V, VGS = 0 V
--
--
10
µA
IDSS
Zero Gate Voltage Drain Current
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
1.15
1.40
Ω
VDS = 400 V, TC = 125°C
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
680
900
pF
--
85
110
pF
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 5.0 A,
RG = 25 Ω
VDS = 400 V, ID = 5.0A,
VGS = 10 V
(Note 4, 5)
--
20
50
ns
--
40
90
ns
--
90
190
ns
--
45
100
ns
--
25
33
nC
--
5
--
nC
--
10
--
nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.0
A
ISM
--
--
20
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 5.0 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
250
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5.0 A,
dIF / dt = 100 A/µs
--
2.2
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Ver.00/21.08.2009
IFP830-TSe.doc
Page 2 of 2
BEIJING ESTEK ELECTRONICS CO.,LTD