WFP650 Silicon N-Channel MOSFET Features � 28A, 200v, RDS(on)=0.09Ω @VGS=10V � Low gate charge (typical 95 nC) � Low crss (typical 75 pF) � Fast switching � 100% avalanche tested � Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain-Source Voltage 200 V Drain Current -Continuous(TC=25℃) 28 A 17.7 A 112 A -Continuous(TC=100℃) IDM Drain Current -Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulse Avalanche Energy (Note 2) ±30 V 600 mJ IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD TJ,TSTG TL Power Dissipation(TC=25℃) -Derate above25℃ Operating and Storage Temperature Range 5.5 V/ns 156 W 1.25 W/℃ -55~150 ℃ 300 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds Thermal Characteristics Symbol Parameter Min Value Typ Max Units 0.8 ℃/W 0.5 - ℃/W - 62.5 ℃/W RQJC Thermal Resistance,Junction-to-Case - - RQCS Thermal Resistance,Case-to-Sink - RQJA Thermal Resistance,Junction-Ambient - Rev.A Jul.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFP650 Electrical Characteristics TC=25℃ Symbol Test Conditions Min Typ Max Units Drain-source Breakdown Voltage Characteristics BVDSS VGS=0V,ID=250µA 200 -- -- V Breakdown Voltage Temperature Coefficient △BVDSS/ △TJ ID=250µA,Reference d to 25℃ -- 0.2 -- V/℃ Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V -- -- 10 µA VDS=160V,TC=125℃ -- -- 100 µA Gate-Body Leakage Current ,Forward IGSSF VGS=30V,VDS=0V -- -- 100 nA Gate-Body Leakage Current ,Reverse IGSSR VGS=-30V,VDS=0V -- -- -100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 2.0 -- 4.0 V -- 0.078 0.09 Ω -- 25 -- S -- 2600 3400 pF -- 330 430 pF -- 75 100 pF -- 30 70 ns -- 240 490 ns -- 295 600 ns -- 195 400 ns -- 95 123 nC -- 13 -- nC -- 43 -- nC Test Conditions Min Typ Max Units Static Drain-Source On-Resistance RDS(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time Td(on) Turn-On Rise Time tr Turn-Off Delay Time Td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VGS=10V,ID=14A VDS=40V,ID=14A (Note4) VDS=25V,VGS=0V, f=1.0MHz VDD=100V,ID=32A,RG =25Ω (Note4,5) VDS=160V,ID=32A,VG S=10V (Note4,5) Source-Drain Ratings and Characteristlcs Characteristics Symbol Maximum Continuous Drain-Source Diode Forward Current IS -- -- -- 28 A Maximum Pulsed Forward Current ISM -- -- -- 112 A Drain-Source Diode Drain-Source Diode Forward Voltage VSD VGS=0V,IS=28A -- -- 1.5 V Reverse Recovery Time trr -- 220 -- ns Reverse Recovery Charge Qrr VGS=0V,IS=32A, dIF/dt=100A/µs (Note4) -- 1.89 -- µC Notes: 1. Repetitive Rating:Pulse Width limited by maximum junction temperature 2. L=1.15mH,IAS=28A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3. ISD≤32A,di/dt≤300A/µs,VDD≤BVDSS,Starting TJ=25℃ 4. Pulse Test:Pulse width≤300µs,Duty cycle≤2% 5. Essentially independent of operating temperature 2/7 Steady,all for your advance WFP650 3/7 Steady,all for your advance WFP650 4/7 Steady,all for your advance WFP650 5/7 Steady,all for your advance WFP650 6/7 Steady,all for your advance WFP650 To-220 Package Dimension 7/7 Steady,all for your advance