2913

NTE2913
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO247 Type Package
Features:
D Advanced Process Technology
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
S
Description:
The NTE2913 Power MOSFET utilizes advanced processing techniques to achieve extremely low
on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO247 package is preferred for commercial−industrial applications where higher power levels
preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because
of its isolated mounting hole.
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +25C, L = 190mH, RG = 25W, IAS = 59A
Note 3. ISD 59A, di/dt 290A/ms, VDD V(BR)DSS, TJ +175C
Rev. 10−13
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
VGS = 0V, ID = 250mA
Min
Typ
Max
Unit
55
−
−
V
−
0.057
−
V/C
−
−
0.008
W
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 59A, Note 4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.0
−
4.0
V
gfs
VDS = 25V, ID = 59A
42
−
−
mhos
IDSS
VDS = 55V, VGS = 0V
−
−
25
mA
VDS = 44V, VGS = 0V, TJ = +150C
−
−
250
mA
Forward Transconductance
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−100
nA
ID = 59A, VDS = 44V, VGS = 10V,
Note 4
−
−
170
nC
−
−
32
nC
−
−
74
nC
−
14
−
ns
−
100
−
ns
td(off)
−
43
−
ns
tf
−
70
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
5.0
−
nH
−
13
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
4000
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 28V, ID = 59A, RG = 2.5W,
RD = 0.39W, Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
1300
−
pF
Reverse Transfer Capacitance
Crss
−
480
−
pF
Min
Typ
Max
Unit
Note 4. Pulse width 300ms; duty cycle 2%.
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
IS
Note 5
−
−
110
A
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
390
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 59A, VGS = 0V,
Note 4
−
−
1.3
V
Reverse Recovery Time
trr
−
110
170
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 59A,
di/dt = 100A/ms, Note 4
−
450
680
mC
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300ms; duty cycle 2%.
Note 5. Calculated continuous current based on maximum allowable junction temperature.
.626 (15.9)
Max
.197 (5.0)
.217
(5.5)
See
Note
.787
(20.0)
.143 (3.65)
Dia Max
.157
(4.0)
.559
(14.2)
Min
.047 (1.2)
.215 (5.45)
G
D
S
Note: Drain connected to metal part of mounting surface.
.094
(2.4)