NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D Advanced Process Technology D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated D Ease of Paralleling D G S Description: The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because of its isolated mounting hole. Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.50C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. Starting TJ = +25C, L = 1.5mH, RG = 25W, IAS = 28A Note 3. ISD 28A, di/dt 486A/ms, VDD V(BR)DSS, TJ +175C Rev. 10−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS Reference to +25C, ID = 1mA TJ VGS = 0V, ID = 250A Min Typ Max Unit 200 − − V − 0.26 − V/C − − 0.04 W Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 28A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.0 − 4.0 V VDS = 50V, ID = 28A 27 − − mhos VDS = 200V, VGS = 0V − − 25 mA VDS = 160V, VGS = 0V, TJ = +150C − − 250 mA Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = 20V − − 100 nA Gate−to−Source Reverse Leakage IGSS VGS = −20V − − −100 nA ID = 28A, VDS = 160V, VGS = 10V, Note 4 − − 234 nC − − 38 nC − − 110 nC − 17 − ns − 60 − ns td(off) − 55 − ns tf − 48 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 5.0 − nH − 13 − nH VGS = 0V, VDS = 25V, f = 1MHz − 4057 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VDD = 100V, ID = 28A, RG = 1.8W, VGS = 10V, Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 603 − pF Reverse Transfer Capacitance Crss − 161 − pF Min Typ Max Unit Note 4. Pulse width 400ms; duty cycle 2%. Source−Drain Ratings and Characteristics: Parameter Symbol Test Conditions Continuous Source Current (Body Diode) IS Note 5 − − 50 A Pulsed Source Current (Body Diode) ISM Note 1 − − 200 A Diode Forward Voltage VSD TJ = +25C, IS = 28A, VGS = 0V, Note 4 − − 1.3 V Reverse Recovery Time trr − 268 402 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 28A, di/dt = 100A/ms, Note 4 − 1.9 2.8 mC Forward Turn−On Time ton Intrinsic turn−on time is negligible (turn−on is dominated by LS + LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 400ms; duty cycle 2%. Note 5. Calculated continuous current based on maximum allowable junction temperature. .626 (15.9) Max .197 (5.0) .217 (5.5) See Note .787 (20.0) .143 (3.65) Dia Max .157 (4.0) .559 (14.2) Min .047 (1.2) .215 (5.45) G D S Note: Drain connected to metal part of mounting surface. .094 (2.4)