2912

NTE2912
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Advanced Process technology
D Ultra Low ON−Resistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
S
Description:
The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low
on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO220 package is universally preferred for all commercial−industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the
TO220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +255C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82A
TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/5C
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23mJ
Peak Diode Recovery dv/dt (Note 3, dv/dt, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.9V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating: pulse width limited by maximum channel temperature.
Note 3. ISD 3 43A, di/dt 3 300A/s, VDD 3 V(BR)DSS, TJ +1755C.
Rev. 10−13
Absolute Maximum Ratings (Cont’d):
Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . +3005C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.655C/W
Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), RthCS . . . . . . . . . . . . . 0.55C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
V(BR)DSS
Test Conditions
VGS = 0V, ID = 2505 A
+V(BR)DSS/+TJ Reference to +255C, ID = 1mA
Min
Typ
Max
Unit
75
−
−
V
−
0.074
−
V/5C
−
−
13
m3
Static Drain-to-Source On-Resistance
RDS(on)
VGS = 10V, ID = 43A, Note 5
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 2505 A
2.0
−
4.0
V
VDS = 50V, ID = 43A, Note 5
38
−
−
S
VDS = 75V, VGS = 0V
−
−
25
5A
VDS = 60V, VGS = 0V, TJ = +1505C
−
−
250
5A
VGS = +20V
−
−
+100
nA
ID = 43A, VDS = 60V, VGS = 10V
−
−
160
nC
Forward Transconductance
Drain−Source Leakage Current
Gate−Source Leakage Current
gfs
IDSS
IGSS
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
−
29
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
−
55
nC
Turn−On Delay Time
td(on)
−
13
−
ns
−
64
−
ns
td(off)
−
49
−
ns
tf
−
48
−
ns
Between lead, .250 (6mm) from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
3820
−
pF
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 38V, ID = 43A, RG = 2.53 ,
VGS = 10V, Note 5
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
610
−
pF
Reverse Transfer Capacitance
Crss
−
130
−
pF
Single Pulse Avalanche Energy (Note 4)
EAS
1280
340
mJ
(Note 6)
(Note 7)
Note
Note
Note
Note
Note
2.
4.
5.
6.
7.
IAS = 50A, L = 3705 H
−
Repetitive rating: pulse width limited by maximum channel temperature.
Starting TJ = +255C, L = 3705 H, RG = 253 , IAS = 43A, VGS = 10V.
Pulse width 3 4005 s; duty cycle 3 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = +1755C.
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IS
Note 1
−
−
82
A
Pulsed Source Current (Body Diode)
ISM
Note 2
−
−
280
A
Diode Forward Voltage
VSD
IS = 43A, VGS = 0V, TJ = +255C, Note 5
−
−
1.2
V
Reverse Recovery Time
trr
−
100
150
ns
Reverse Recovery Charge
Qrr
TJ = +255C, IF = 43A,
di/dt = 100A/5 s, Note 5
−
410
610
5C
Forward Turn−On Time
ton
Continuous Source Current (Body Diode)
Intrinsic turn−on time is negligible (turn−on is dominated by LS + LD)
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating: pulse width limited by maximum channel temperature.
Note 5. Pulse width 3 4005 s; duty cycle 3 2%.
.420 (10.67)
Max
.110 (2.79)
Drain
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250
(6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain