Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use M1MA151AT1 M1MA152AT1 in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. • Fast t rr , < 3.0 ns • Low C D , < 2.0 pF • Available in 8 mm Tape and Reel SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel. ANODE 3 3 2 1 CASE 318D–03, STYLE4 SC–59 2 1 CATHODE NO CONNECTION MAXIMUM R ATINGS (T A = 25°C) Rating Reverse Voltage Peak Reverse Voltage Symbol VR M1MA151AT1 M1MA152AT1 M1MA151AT1 M1MA152AT1 I FSM (1) Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Symbo PD TJ T stg lMax 200 150 -55 to +150 Unit mW °C °C V RM Forward Current Peak Forward Current Peak Forward Surge Current IF I FM Unit Vdc Vdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time Symbol IR VF VR CD t rr (2) Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 µA Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100Ω, I rr = 0.1 I R Max 0.1 0.1 1.2 — — 2.0 3.0 Unit µAdc Vdc Vdc pF ns 1. t = 1 SEC 2. t rr Test Circuit H1–1/2 M1MA151AT1 M1MA152AT1 OUTPUT PULSE INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT t t r p t t I rr F t 10% R L 90% V R t p = 2 µs t r = 0.35 ns I rr = 0.1 I R I F = 10 mA V R= 6 V R L = 100 Ω DEVICE MARKING Marking Symbol Type No. Symbol 151A MA 152A MB MA X The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. H1–2/2