ONSEMI NZQA5V6XV5T1

NZQA5V6XV5T1 Series
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
http://onsemi.com
Specification Features
SOT-553
CASE 463B
PLASTIC
• SOT-553 Package Allows Four Separate Unidirectional
Configurations
• Low Leakage < 1 A @ 3 Volt for NZQA5V6XV5T1
• Breakdown Voltage: 5.6 Volt - 6.8 Volt @ 1 mA
• ESD Protection Meeting IEC61000-4-2 - Level 4
MARKING DIAGRAM
Mechanical Characteristics
•
•
•
•
•
xx D
Void Free, Transfer-Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
100% Lead Free, MSL1 @ 260°C Reflow Temperature
xx
D
= Device Marking
= One Digit Date Code
1
5
2
3
4
ORDERING INFORMATION
 Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 0
1
Device
Package
Shipping
NZQA5V6XV5T1
SOT-553
4000/Tape & Reel
NZQA6V2XV5T1
SOT-553
4000/Tape & Reel
NZQA6V8XV5T1
SOT-553
4000/Tape & Reel
Publication Order Number:
NZQA5V6XV5T1/D
NZQA5V6XV5T1 Series
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VBR
VC VBR VRWM
Working Peak Reverse Voltage
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
V
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IPP
Uni-Directional
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1)
PPK
100
W
Steady State Power - 1 Diode (Note 2)
PD
300
mW
Thermal Resistance Junction to Ambient
Above 25°C, Derate
RJA
370
2.7
°C/W
mW/°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
-55 to +150
°C
VPP
16
16
9
kV
TL
260
°C
ESD Discharge
MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge
Lead Solder Temperature (10 seconds duration)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Breakdown Voltage
VBR @ 1 mA (Volts)
Leakage Current
IRM @ VRM
Min
Nom
Max
VRWM
IRWM (A)
VC (V)
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
VF @ IF =
200 mA
IPP (A)
(pF)
(V)
VC Max @ IPP
Device
Device
Marking
NZQA5V6XV5T1
56
5.32
5.6
5.88
3.0
1.0
10.5
10
90
1.3
NZQA6V2XV5T1
62
5.89
6.2
6.51
4.0
0.5
11.5
9.0
80
1.3
NZQA6V8XV5T1
68
6.46
6.8
7.14
4.3
0.1
12.5
8.0
70
1.3
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C
http://onsemi.com
2
NZQA5V6XV5T1 Series
110
110
WAVEFORM
PARAMETERS
tr = 8 s
td = 20 s
PERCENT OF IPP
90
80
70
% OF RATED POWER OR IPP
100
100
c-t
60
td = IPP/2
50
40
30
20
10
0
0
5
10
15
20
60
50
40
30
20
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Pulse Waveform
Figure 2. Power Derating Curve
150
100
90
NZQA6V8XV5T1
12
NZQA6V2XV5T1
C, CAPACITANCE (pF)
VC, CLAMPING VOLTAGE (V)
70
t, TIME (s)
14
10
NZQA5V6XV5T1
8
6
4
2
0
80
10
0
30
25
90
1
3
5
7
9 10 11
80
70
60
50
40
30
20
10
0
12.5 13.5
5.3
5.6
5.9
6.2
6.5
6.8
IPP, PEAK PULSE CURRENT (A)
VBR, BREAKDOWN VOLTAGE (V)
Figure 3. Clamping Voltage versus
Peak Pulse Current
Figure 4. Typical Capacitance
http://onsemi.com
3
7.1
NZQA5V6XV5T1 Series
PACKAGE DIMENSIONS
SOT-553, 5-LEAD
CASE 463B-01
ISSUE O
A
-X-
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
C
K
4
1
2
B
-Y-
3
D
G
J
5 PL
0.08 (0.003)
DIM
A
B
C
D
G
J
K
S
S
M
X Y
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
BASE 1
EMITTER 1/2
BASE 2
COLLECTOR 2
COLLECTOR 1
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
STYLE 2:
PIN 1.
2.
3.
4.
5.
CATHODE
ANODE
CATHODE
CATHODE
CATHODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
http://onsemi.com
4
NZQA5V6XV5T1/D