NZQA5V6XV5T1 Series Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com Specification Features SOT-553 CASE 463B PLASTIC • SOT-553 Package Allows Four Separate Unidirectional Configurations • Low Leakage < 1 A @ 3 Volt for NZQA5V6XV5T1 • Breakdown Voltage: 5.6 Volt - 6.8 Volt @ 1 mA • ESD Protection Meeting IEC61000-4-2 - Level 4 MARKING DIAGRAM Mechanical Characteristics • • • • • xx D Void Free, Transfer-Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 100% Lead Free, MSL1 @ 260°C Reflow Temperature xx D = Device Marking = One Digit Date Code 1 5 2 3 4 ORDERING INFORMATION Semiconductor Components Industries, LLC, 2003 February, 2003 - Rev. 0 1 Device Package Shipping NZQA5V6XV5T1 SOT-553 4000/Tape & Reel NZQA6V2XV5T1 SOT-553 4000/Tape & Reel NZQA6V8XV5T1 SOT-553 4000/Tape & Reel Publication Order Number: NZQA5V6XV5T1/D NZQA5V6XV5T1 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR VC VBR VRWM Working Peak Reverse Voltage IR VF IT Maximum Reverse Leakage Current @ VRWM V Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni-Directional MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1) PPK 100 W Steady State Power - 1 Diode (Note 2) PD 300 mW Thermal Resistance Junction to Ambient Above 25°C, Derate RJA 370 2.7 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg -55 to +150 °C VPP 16 16 9 kV TL 260 °C ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge Lead Solder Temperature (10 seconds duration) ELECTRICAL CHARACTERISTICS (TA = 25°C) Breakdown Voltage VBR @ 1 mA (Volts) Leakage Current IRM @ VRM Min Nom Max VRWM IRWM (A) VC (V) Typ Capacitance @ 0 V Bias (Note 3) Max VF @ IF = 200 mA IPP (A) (pF) (V) VC Max @ IPP Device Device Marking NZQA5V6XV5T1 56 5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3 NZQA6V2XV5T1 62 5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3 NZQA6V8XV5T1 68 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C http://onsemi.com 2 NZQA5V6XV5T1 Series 110 110 WAVEFORM PARAMETERS tr = 8 s td = 20 s PERCENT OF IPP 90 80 70 % OF RATED POWER OR IPP 100 100 c-t 60 td = IPP/2 50 40 30 20 10 0 0 5 10 15 20 60 50 40 30 20 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Waveform Figure 2. Power Derating Curve 150 100 90 NZQA6V8XV5T1 12 NZQA6V2XV5T1 C, CAPACITANCE (pF) VC, CLAMPING VOLTAGE (V) 70 t, TIME (s) 14 10 NZQA5V6XV5T1 8 6 4 2 0 80 10 0 30 25 90 1 3 5 7 9 10 11 80 70 60 50 40 30 20 10 0 12.5 13.5 5.3 5.6 5.9 6.2 6.5 6.8 IPP, PEAK PULSE CURRENT (A) VBR, BREAKDOWN VOLTAGE (V) Figure 3. Clamping Voltage versus Peak Pulse Current Figure 4. Typical Capacitance http://onsemi.com 3 7.1 NZQA5V6XV5T1 Series PACKAGE DIMENSIONS SOT-553, 5-LEAD CASE 463B-01 ISSUE O A -X- 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K 4 1 2 B -Y- 3 D G J 5 PL 0.08 (0.003) DIM A B C D G J K S S M X Y STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 BASE 1 EMITTER 1/2 BASE 2 COLLECTOR 2 COLLECTOR 1 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 STYLE 2: PIN 1. 2. 3. 4. 5. CATHODE ANODE CATHODE CATHODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 NZQA5V6XV5T1/D