FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W (Typ.) High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 136 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO Output Power Pout Linear Gain GL Drain Current IDSR Power-Added Efficiency ηadd Thermal Resistance Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 220mA IGS = -2.2mA VDS = 12V f = 2.17 GHz IDS = 2.0A Pin = 40.0dBm Channel to Case CASE STYLE: IU Edition 1.1 October 2004 1 Min. Limits Typ. Max. Unit - 8 - A -0.1 -0.3 -0.5 V -5 - - V 48.0 49.0 - dBm 10.0 11.0 - dB - 11.5 15 A - 50 - % - 0.8 1.1 °C/W FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER IMD vs. OUTPUT POWER -30 -25 -30 -35 -40 -45 -40 IMD (dBc) ACPR (dB) -35 VDS = 12V IDS = 2.0A fo = 2.14GHz W-CDMA Single Signal +5MHz -5MHz +10MHz -10MHz -45 -50 -55 -50 -60 VDS = 12V IDS = 2.0A f = 2.14GHz ∆f = 1MHz Wide Band Tuned IM3 IM5 -55 -65 -60 -70 -65 36 37 38 39 40 41 42 43 -75 44 33 34 35 36 37 38 39 40 41 42 43 44 45 Output Power (dBm) Output Power (dBm) OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER 50 48 IDS = 2.0A 42dBm 40dBm 38dBm Output Power (dBm) 46 36dBm 44 34dBm 32dBm 42 30dBm 40 28dBm 38 26dBm 36 24dBm 34 1.99 2.05 2.11 2.17 2.23 2.29 Frequency (GHz) 2 46 f = 2.17GHz Wide Band Tuned Pout 44 42 50 ηadd 40 40 38 30 36 20 34 10 24 26 28 30 32 34 36 38 40 Input Power (dBm) 42 ηadd (%) 48 Output Power (dBm) 50 VDS =12V VDS = 12V IDS = 2.0A Wide Band Tuned FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 1000mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4300 4400 4500 S11 MAG ANG MAG .933 .925 .907 .885 .852 .814 .764 .705 .650 .616 .601 .599 .617 .630 .669 .723 .793 .842 .852 .832 .769 .670 .509 .272 .346 .444 .651 .745 .794 .818 .843 .856 .860 .840 .746 .636 .662 .715 .772 .851 .957 1.085 1.211 1.324 1.422 1.492 1.579 1.635 1.744 1.873 2.012 2.002 1.892 1.685 1.503 1.373 1.312 1.197 .890 .777 .772 .644 .498 .391 .344 .302 .281 .261 .260 .318 168.4 166.9 164.8 163.1 161.0 159.2 157.6 157.4 159.0 162.5 165.8 169.9 172.1 174.1 175.7 175.5 170.9 162.6 151.8 138.5 120.4 94.8 53.4 -1.0 -37.6 -59.4 -86.0 -106.1 -119.8 -129.7 -137.8 -145.1 -158.2 -166.0 -179.8 S21 S12 ANG MAG 61.5 56.8 50.9 43.8 35.7 25.8 14.0 0.4 -13.9 -30.5 -46.2 -62.8 -79.4 -95.0 -113.0 -132.3 -156.1 -179.5 158.7 139.9 121.8 103.6 79.9 58.7 49.6 36.0 11.8 -3.6 -13.3 -19.5 -26.2 -31.0 -43.6 -47.9 -48.1 .010 .012 .014 .017 .019 .023 .025 .030 .032 .033 .033 .030 .029 .026 .022 .017 .012 .014 .018 .025 .033 .036 .044 .037 .026 .027 .026 .027 .025 .027 .023 .026 .046 .076 .157 S22 ANG 58.6 54.2 55.9 50.8 47.4 37.4 32.8 17.9 8.1 -9.4 -23.9 -38.8 -50.9 -77.7 -98.0 -127.2 -179.3 120.4 83.4 53.4 38.1 14.4 -13.0 -41.7 -37.4 -34.1 -42.2 -48.4 -41.2 -50.0 -41.8 -35.5 -24.0 -18.7 -33.6 MAG ANG .879 .864 .855 .840 .823 .812 .809 .821 .840 .870 .891 .893 .869 .831 .752 .651 .554 .544 .604 .679 .739 .794 .837 .867 .871 .878 .889 .890 .893 .891 .891 .892 .890 .887 .874 173.1 172.5 172.1 172.0 172.1 172.8 173.7 174.9 175.3 174.4 172.2 168.7 165.4 160.6 157.3 157.7 164.9 176.7 -176.3 -174.2 -175.0 -176.6 -178.9 177.8 174.8 172.8 170.2 167.9 165.6 163.2 160.9 158.0 151.8 147.7 141.9 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. 3 FLL800IQ-2C L-Band High Power GaAs FET Case Style "IQ" –0.2 24.0 20.4 –0.2 2 1 4-0.1 –0.2 15.5 –0.2 17.4 –0.15 3 8.0 4-2.6 –0.2 2.5 MIN. 45¡ 4-2.0 –0.2 4-R1.3 4 5 –0.13 6.0 1.9 5.5 MAX. –0.2 –0.2 14.9 2.4 For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 1, 2: 3: 4, 5: 6: Gate Source Drain Source Unit: mm (inches) CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4