FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS applications. This device uses a small ceramic package that is optimized for high volume cost driven requirements. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Parameter Symbol Condition Unit Rating Drain-Source Voltage VDS 3.5 V Gate-Source Voltage VGS -3.0 V 180 mW Pt Total Power Dissipation Note Storage Temperature TSTG -65 to 150 °C Channel Temperature TCH 150 °C Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Symbol Item Conditions Min. Limits Typ. Max. Unit Saturated Drain Current IDSS VDS = 2V, VGS=0V 10 30 60 mA Transconductance gm VDS = 2V, IDS=10mA 35 50 - mS Pinch-Off Voltage Vp VDS = 2V, IDS=1mA -0.1 -0.7 -1.5 V IGS = -10µA -3.0 - - V - 0.40 0.50 dB 12.0 13.5 - dB - 300 400 °C/W Gate-Source Breakdown Voltage VGSO Noise Figure NF Associated Gain Gas Thermal Resistance Rth VDS = 2V, IDS = 10mA, f=12GHz Channel to Case CASE STYLES: LP Note: RF parameters for LP devices are measured on a sample basis as follows: 1200 1201 3201 10001 Lot qty. or to to or Edition 1.1 August 2004 less 3200 10000 over Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 FHX76LP Super Low Noise HEMT DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 40 150 30 Drain Current (mA) 100 50 0 0 50 100 150 20 -0.2V 10 0 200 Ambient Temperature (°C) 18 0.6 15 12 Noise Figure (dB) 0.8 NF Gas 1.5 11 9 0.5 NF 6 0.0 2 4 8 10 13 1.0 9 0.2 4 15 VDS=2V f=12GHz 21 Gas 0.4 2.0 Associated Gain (dB) Noise Figure (dB) 1.0 24 VDS=2V IDS=10mA -0.4V -0.6V -0.8V 1 2 3 Drain-Source Voltage (V) NF & Gas vs. IDS NF & Gas vs. FREQUENCY 1.2 VGS =0V 0 20 Frequency (GHz) 7 10 20 Drain Current (mA) 2 30 Associated Gain (dB) Total Power Dissipation (mW) POWER DERATING CURVE FHX76LP Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 1.0 +j10 1.5 10 0 25 2.0 3.0dB 0.5 Γopt 50 100 f=12GHz VDS=2V IDS=10mA +j250 250 -j10 Γopt=0.32∠153.8° Rn/50=0.06 NFmin=0.40dB -j250 -j25 -j100 -j50 NOISE PARAMETERS VDS=2V, IDS=10MA Ga(max) AND |S21| vs. FREQUENCY 25 2 4 6 8 10 12 14 16 18 20 Γopt (MAG) (ANG) 0.79 0.62 0.50 0.41 0.35 0.32 0.30 0.29 0.29 0.29 12.5 30.0 54.1 83.6 117.3 153.8 -168.0 -129.5 -91.8 -56.3 NFmin (dB) Rn/50 0.28 0.29 0.30 0.32 0.35 0.40 0.48 0.60 0.72 0.91 .24 .20 .16 .12 .08 .06 .06 .09 .14 .19 VDS=2V IDS=10mA 20 Gain (dB) Freq. (GHz) Ga(max) 15 |S21|2 10 5 0 4 6 8 10 12 Frequency (GHz) 3 20 FHX76LP Super Low Noise HEMT DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 40 150 30 Drain Current (mA) Total Power Dissipation (mW) POWER DERATING CURVE 100 50 0 0 50 100 150 20 -0.2V 10 0 200 Ambient Temperature (°C) S11 VGS =0V -0.4V -0.6V -0.8V 1 2 3 Drain-Source Voltage (V) S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 1000 .987 -14.8 5.535 164.2 .014 80.2 .585 -11.4 2000 .965 -29.4 5.463 148.8 .027 70.2 .567 -22.9 3000 .925 -44.6 5.334 133.2 .041 57.7 .538 -34.7 4000 .878 -58.3 5.154 118.8 .049 50.0 .511 -45.2 5000 .828 -72.9 5.019 104.3 .059 40.6 .480 -56.4 6000 .776 -87.8 4.825 89.8 .067 32.4 .446 -68.4 7000 .719 -102.8 4.606 75.6 .075 23.2 .413 -80.6 8000 .669 -116.6 4.354 61.9 .079 15.2 .394 -92.6 9000 .631 -129.4 4.130 49.5 .083 6.3 .374 -102.4 10000 .590 -141.7 3.982 37.0 .086 .2 .365 -112.5 11000 .548 -155.3 3.849 24.7 .088 -7.6 .335 -121.9 12000 .507 -169.6 3.689 12.4 .091 -14.2 .323 -134.1 13000 .482 177.0 3.545 -.2 .095 -20.8 .313 -145.0 14000 .459 164.7 3.425 -11.9 .096 -28.7 .315 -155.9 15000 .439 152.3 3.330 -24.4 .098 -36.4 .324 -165.4 16000 .419 138.7 3.264 -37.1 .102 -44.1 .322 -174.3 17000 .404 123.9 3.238 -50.3 .103 -54.6 .321 175.4 18000 .383 107.3 3.176 -63.5 .108 -63.4 .316 165.3 19000 .377 93.2 3.101 -78.0 .105 -74.5 .320 153.2 20000 .348 76.5 3.028 -92.3 .110 -87.6 .301 146.1 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.1mm length, 25µm Dia Au wire) Drain n=1 (0.1mm length, 25µm Dia Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) 4 S22 MAG ANG 4 FHX76LP Super Low Noise HEMT Case Style "LP" Metal-Ceramic Package 2 4 3 4.78±0.5 (0.188) 1.0 Min (0.039) 1.78±0.15 (0.07) 1 1.5 ±0.5 1.78+0.15 1.5 ±0.5 (0.059) (0.07) (0.059) 4.78±0.5 (0.188) 1.5 ±0.5 1.78+0.15 1.5 ±0.5 (0.07) (0.059) (0.059) 0.5 (0.02) 1.78±0.15 1.3 Max (0.051) (0.07) 0.1 (0.004) 1: Gate 2: Source (Flange) 3: Drain 4: Source (Flange) Unit: mm (Inches) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 5